Process of fabricating a semiconductor package
A semiconductor package that includes a conductive can, a power semiconductor device electrically and mechanically attached to the inside surface of the can, and an IC semiconductor device copackaged with the power semiconductor device inside the can.
1. A process for fabricating a semiconductor package comprising:
depositing a dielectric body over a portion of an interior surface of a conductive clip; and
forming at least one I/O lead over said dielectric body, said I/O lead including a conductive pad portion, an I/O terminal, and a track connecting said conductive pad to said I/O terminal.
2. The process of claim 1 , wherein said dielectric body is drop-on-demand deposited.
3. The process of claim 1 , wherein said I/O lead is drop-on-demand deposited.
4. The process of claim 1 , further comprising depositing a solder resist over at least a portion of said terminal.
5. The process of claim 4 , wherein said solder resist is drop-on-demand deposited.
6. The process of claim 1 , wherein said conductive clip is can-shaped.
7. The process of claim 1 , wherein said conductive clip is comprised of copper.
8. The process of claim 1 , wherein said conductive clip is plated with either gold or silver.
9. The process of claim 1 , wherein said dielectric body is comprised of a polymer.
10. The process of claim 1 , wherein said dielectric is comprised of dielectric particles loaded in an organic base.
11. The process of claim 10 , wherein said organic base is comprised of one of epoxy, acrylate, polyimide and organopolysiloxane.
12. The process of claim 10 , wherein said dielectric particles are comprised of a metal oxide.
13. The process of claim 12 , wherein said metal oxide is alumina.
14. The process of claim 1 , further comprising depositing and curing an organic based trace layer to serve as a seed layer for the construction of said I/O lead.
15. The process of claim 1 , wherein said I/O lead is formed with a polymer impregnated with micronized, conductive particles.
16. The process of claim 15 , wherein said micronized, conductive particles are selected from a list consisting of gold, silver, platinum, and combinations thereof.
17. The process of claim 1 , wherein said I/O lead is comprised of a mixture of solder and metal particles.
18. The process of claim 10 , wherein said dielectric particles are comprised of aluminum nitride.