Semiconductor device including microstrip line and coplanar line
Provided is a semiconductor device including an interconnect substrate, a transmission line which is formed on the interconnect substrate, and a circuit component which is mounted over the interconnect substrate and has a ground plane. The transmission line includes a first portion and a second portion that is connected to the first portion. The first portion and the ground plane constitute a microstrip line. The second portion and ground line constitute a coplanar line.
1 . A semiconductor device, comprising:
an interconnect substrate having a main surface;
a transmission line which is provided on the main surface of the interconnect substrate; and
a circuit component which is mounted over the main surface of the interconnect substrate and includes a ground plane,
wherein at least a part of the transmission line and the ground plane constitute a microstrip line.
2 . The semiconductor device according to claim 1 , further comprising a ground line provided on the main surface of the interconnect substrate,
wherein the transmission line comprises a first portion and a second portion that is connected to the first portion, the first portion and the ground plane constituting the microstrip line, the second portion and the ground line constituting a coplanar line.
3 . The semiconductor device according to claim 2 , wherein the ground plane faces to only the first portion of the transmission line.
4 . The semiconductor device according to claim 2 , wherein the main surface of the interconnect substrate is a first main surface and the interconnect substrate further comprises a second main surface opposing to the first main surface, and
wherein a ground plane is not provided under the second main surface.
5 . The semiconductor device according to claim 2 , wherein the ground plane is coupled to the ground line.
6 . The semiconductor device according to claim 1 , wherein the circuit component is mounted on the main surface of the interconnect substrate through flip-chip bonding.
7 . The semiconductor device according to claim 1 , wherein the circuit component is a dummy chip.
8 . The semiconductor device according to claim 6 , further comprising a semiconductor chip mounted on the circuit component through flip-chip bonding.
9 . The semiconductor device according to claim 8 , wherein the semiconductor chip comprises a plurality of semiconductor chips which are stacked.
10 . The semiconductor device according to claim 1 , further comprising:
a first semiconductor chip; and
a second semiconductor chip,
wherein the main surface of the interconnect substrate is a first main surface and the interconnect substrate further comprises a second main surface opposing to the first main surface, and
wherein the first semiconductor chip is mounted on the first main surface and the second semiconductor chip is mounted on the second surface of the interconnect substrate.
11 . The semiconductor device according to claim 10 , further comprising a conductive plug extending through the interconnect substrate,
wherein the second semiconductor chip is coupled to the first semiconductor chip by the conductive plug.
12 . The semiconductor device according to claim 1 , further comprising a semiconductor chip,
wherein the semiconductor chip and the circuit component are mounted in different areas on the main surface of the interconnect substrate.