IP Library Granted Patent US 8,172,950
Granted Patent B2
US 8,172,950 · App. 11/990,696 · Granted May 8, 2012

Substrate processing apparatus and semiconductor device producing method

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Quick Facts
Patent No.
US 8,172,950
App. No.
11/990,696
Granted
May 8, 2012
Kind
B2
Abstract

Disclosed is a substrate processing apparatus, including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.

Claims (16)

1. A substrate processing apparatus, comprising:

a chamber, made of a metal, to form a processing space for processing a substrate;

at least one rod-like heating body to heat the substrate; and

a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein

an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion.

2. The substrate processing apparatus according to claim 1 , wherein the chamber is divided into a side block and a bottom block.

3. The substrate processing apparatus according to claim 2 , wherein the side block is formed with a cooling passage through which a cooling medium flows.

4. The substrate processing apparatus according to claim 2 , wherein a cooling plate in which a cooling medium flows is disposed on the bottom block between the tube body and the bottom block.

5. The substrate processing apparatus according to claim 1 , wherein an O-ring is provided in a circumferential direction of the penetrating portion.

6. The substrate processing apparatus according to claim 1 , wherein the tube body is made of quartz.

7. The substrate processing apparatus according to claim 1 , wherein in each of both ends of the tube body, a tapered portion is provided between an outer wall side of the chamber and an inner wall side of the chamber to allow the outer diameter of the tube body on the inner wall side to be smaller than the outer diameter of the tube body on the outer wall side.

8. A producing method of a semiconductor device, comprising:

loading a substrate into a processing space of a substrate processing apparatus including: a chamber, made of a metal, to form a processing space for processing a substrate; at least one rod-like heating body to heat the substrate; and a tube body, made of a material different from that of the chamber, to accommodate the heating body therein, wherein an outer diameter of the tube body on a processing space side in a penetrating portion where the tube body penetrates a wall of the chamber is set to be smaller than an outer diameter of the tube body on an outer side of the chamber in the penetrating portion;

heating the processing space by the heating body accommodated in the tube body;

processing the substrate in the processing space; and

unloading the substrate from the processing space.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 31, 2018
From: HITACHI KOKUSAI ELECTRIC INC.
To: KOKUSAI ELECTRIC CORPORATION
Reel/Frame 048008/0206 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 18, 2008
From: YANAGISAWA, YOSHIHIKO; TANABE, MITSURO
To: HITACHI KOKUSAI ELECTRIC INC.
Reel/Frame 021257/0633 →