Light emitting diode having a thermal conductive substrate and method of fabricating the same
View Patent ↗Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.
1. A light emitting diode, comprising:
a thermally conductive insulating substrate;
metal patterns disposed spaced apart from one another on the insulating substrate, the metal patterns each comprising a reflective layer disposed on a thermally conductive layer;
light emitting cells disposed on respective ones of the metal patterns, each of the light emitting cells including a P-type semiconductor layer, an active layer and an N-type semiconductor layer; and
metal wires to electrically connect the light emitting cells, in series,
wherein the metal wires are directly connected to the reflective layers and extend to upper surfaces of adjacent ones of the light emitting cells.
2. The light emitting diode as claimed in claim 1 , wherein the P-type semiconductor layers are disposed on the respective metal patterns, and N-type semiconductor layers form the upper surfaces of the light emitting cells.
3. The light emitting diode as claimed in claim 2 , further comprising electrode pads formed on the N-type semiconductor layers, wherein the metal wires are connected to the electrode pads.
4. The light emitting diode as claimed in claim 2 , wherein the surface of the N-type semiconductor layer of each of the light emitting cells has a roughened surface.
5. The light emitting diode as claimed in claim 1 , wherein the metal wires are separated from side surfaces of the adjacent light emitting cells by empty spaces.
6. A light emitting diode, comprising:
an insulating substrate having a thermal conductivity greater than the thermal conductivity of a sapphire substrate;
metal patterns disposed spaced apart from one another on the insulating substrate, the metal patterns each comprising a reflective layer disposed on a thermally conductive layer;
light emitting cells disposed on respective ones of the metal patterns, each of the light emitting cells including a P-type semiconductor layer, an active layer and an N-type semiconductor layer; and
metal wires to electrically connect the light emitting cells, in series,
wherein the metal wires are directly connected to the reflective layers and extend to upper surfaces of adjacent ones of the light emitting cells.
7. The light emitting diode as claimed in claim 6 , wherein the metal wires are separated from side surfaces of the adjacent light emitting cells by empty spaces.
8. A light emitting diode, comprising:
an insulating substrate comprising SiC;
metal patterns disposed spaced apart from one another on the insulating substrate, the metal patterns each comprising a reflective layer disposed on a thermal conductive layer;
light emitting cells disposed on respective ones of the metal patterns, each of the light emitting cells including a P-type semiconductor layer, an active layer and an N-type semiconductor layer; and
metal wires to electrically connect the light emitting cells, in series,
wherein the metal wires are directly connected to the reflective layers and extend to upper surfaces of adjacent ones of the light emitting cells.
9. The light emitting diode as claimed in claim 8 , wherein the metal wires are separated from side surfaces of the adjacent light emitting cells by empty spaces.