Patent Assignment
Reel/Frame 032723/0126
Change of Name
Recorded: 2014-04-21
Pages: 11
Assignor
SEOUL OPTO DEVICE CO., LTD
Executed: 2013-07-11
Assignee
SEOUL VIOSYS CO., LTD
65-12 SANDAN-RO, 163BEON-GIL, DANWON-GU, ANSAN-SI, GYEONGGI-DO, KOREA, REPUBLIC OF
Covered Properties
(231)
Gallium Nitride-Based Iii-V Group Compound Semiconductor Device and Method of Manufacturing the Same
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Light Emitting Device Having a Plurality of Light Emitting Cells and Package Mounting the Same
Method of Fabricating Light Emitting Diode
Light Emitting Device Having a Plurality of Light Emitting Cells Connected in Series and Method of Fabricating the Same
Light Emitting Device Having a Plurality of Light Emitting Cells and Method of Fabricating the Same
Nanostructure Having a Nitride-Based Quantum Well and Light Emitting Diode Employing the Same
Light Emitting Diode
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode Having a Thermal Conductive Substrate and Method of Fabricating the Same
Light Emitting Device for Ac Power Operation
Lighting Emitting Device Employing Nanowire Phosphors
Alternating Current Light Emitting Device
Ac Light Emitting Diode and Method for Fabricating the Same
Light Emitting Device and Method of Manufacturing the Same
Method of Forming Nitride Semiconductor Layer on Patterned Substrate and Light Emitting Diode Having the Same
Light Emitting Diode
Light Emitting Diode Having Well and/or Barrier Layers with Superlattice Structure
Light Emitting Diode Employing an Array of Nanorods and Method of Fabricating the Same
Light Emitting Device Having Vertically Stacked Light Emitting Diodes
Ac Light Emitting Device Having Photonic Crystal Structure and Method of Fabricating the Same
Light Emitting Diode with Ito Layer and Method for Fabricating the Same
Light Emitting Device with Light Emitting Cells Arrayed
Ac Light Emitting Diode Having Improved Transparent Electrode Structure
Light Emitting Diode Having Algan Buffer Layer and Method of Fabricating the Same
Patterned Substrate for Light Emitting Diode and Light Emitting Diode Employing the Same
Light Emitting Device Having Zener Diode Therein and Method of Fabricating the Same
Nitride Semiconductor Light Emitting Diode and Method of Fabricating the Same
Application:
12/090,059 →
Publication:
US 2009/0261376
Method of Forming P-Type Compound Semiconductor Layer
Method of Forming Buffer Layer for Nitride Compound Semiconductor Light Emitting Device and Nitride Compound Semiconductor Light Emitting Device Having the Buffer Layer
Light Emitting Diode with Improved Current Spreading Performance
(Al, Ga, In)N-BASED COMPOUND SEMICONDUCTOR AND METHOD OF FABRICATING THE SAME
Light Emitting Diode and Method for Manufacturing the Same
Light Emitting Diode Having Active Region of Multi Quantum Well Structure
Light Emitting Diode with Improved Structure
Light Emitting Diode and Method for Manufacturing the Same
Light Emitting Diode Package
Light Emitting Diode with Improved Structure
Ac Light Emitting Diode
Laser Diode Having Nano Patterns and Method of Fabricating the Same
Light Emitting Diode
Group Iii Nitride Compound Semiconductor Device
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode Having Active Region of Multi Quantum Well Structure
Method for Forming Ohmic Electrode and Semiconductor Light Emitting Element
Method for Forming Metal Electrode, Method for Manufacturing Semiconductor Light Emitting Elements and Nitride Based Compound Semiconductor Light Emitting Elements
Light Emitting Device Having a Plurality of Light Emitting Cells and Method of Fabricating the Same
Light Emitting Diode Having Extensions of Electrodes for Current Spreading
Light Emitting Diode Having Alingap Active Layer and Method of Fabricating the Same
Method of Fabricating Light Emiting Diode Chip
Light Emitting Diode Having Light Emitting Cell with Different Size and Light Emitting Device Thereof
Light Emitting Device for Ac Operation
Ultraviolet Light Emitting Diode Package
Light Emitting Device Having a Pluralilty of Light Emitting Cells and Package Mounting the Same
Light Emitting Device and Method for Fabricating the Same
Light Emitting Device for Ac Operation
Light Emitting Device Having Isolating Insulative Layer for Isolating Light Emitting Cells from Each Other and Method of Fabricating the Same
Light Emitting Device
A Luminous Element Having a Plurality of Cells
Ac Light Emitting Diode
Light Emitting Diode Having Barrier Layer of Superlattice Structure
Multi-Layer Ohmic Electrode, Semiconductor Light Emitting Element Having Multi-Layer Ohmic Electrode, and Method of Forming Same
Light Emitting Device and Fabrication Method Thereof
Light Emitting Device and Method for Manufacturing the Same
Light Emitting Diode Having Modulation Doped Layer
Method of Fabricating Ac Light Emitting Device Having Photonic Crystal Structure
Method of Forming P-Type Compound Semiconductor Layer
Light Emitting Device
Light Emitting Device and Method of Fabricating the Same
Light Emitting Diode Having Algan Buffer Layer and Method of Fabricating the Same
Ac Light Emitting Device with Long-Persistent Phosphor and Light Emitting Device Module Having the Same
Light Emitting Diode and Method of Fabricating the Same
Light Emitting Diode with Ito Layer and Method for Fabricating the Same
Light Emitting Diode for Ac Operation
Light Emitting Diode for Ac Operation
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Device Having Plurality of Light Emitting Cells and Method of Fabricating the Same
Light Emitting Device Having a Plurality of Non-Polar Light Emitting Cells and a Method of Fabricating the Same
Light Emitting Device Having Plurality of Non-Polar Light Emitting Cells and Method of Fabricating the Same
Light Emitting Diode Having Light Emitting Cell with Different Size and Light Emitting Device Thereof
Light Emitting Device and Method of Manufacturing the Same
Semiconductor Substrate, Method of Fabricating the Same, Semiconductor Device, and Method of Fabricating the Same
Ac Light Emitting Diode and Method for Fabricating the Same
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Method of Fabricating Light Emitting Diode Using Laser Lift-Off Technique and Laser Lift-Off Apparatus Having Heater
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Ac Light Emitting Diode
Group Iii Nitride Compound Semiconductor Device
Light Emitting Device Having a Plurality of Light Emitting Cells and Package Mounting the Same
Laser Diode Having Nano Patterns and Method of Fabricating the Same
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Light Emitting Device Having a Plurality of Light Emitting Cells Connected in Series and Method of Fabricating the Same
Light Emitting Device Having a Plurality of Light Emitting Cells and Method of Fabricating the Same
Light Emitting Device Having Vertically Stacked Light Emitting Diodes
Light Emitting Device and Method for Manufacturing the Same
Semiconductor Substrate, Semiconductor Device, and Manufacturing Methods Thereof
Method of Fabricating Semiconductor Substrate and Method of Fabricating Light Emitting Device
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode and Method of Fabricating the Same
Light Emitting Device Having a Plurality of Light Emitting Cells and Package Mounting the Same
Light Emitting Device for Ac Power Operation
Light Emitting Device Employing Nanowire Phosphors
Semiconductor Substrate, Semiconductor Device, and Manufacturing Methods Thereof
Ac Light Emitting Diode Having Full-Wave Light Emitting Cell and Half-Wave Light Emitting Cell
Light Emitting Device and Method of Manufacturing the Same
Ac Light Emitting Diode and Method for Fabricating the Same
Light Emitting Device for Ac Power Operation
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Light Emitting Diode Chip Having Distributed Bragg Reflector, Method of Fabricating the Same, and Light Emitting Diode Package Having Distributed Bragg Reflector
Method of Manufacturing a Semiconductor Substrate Having a Cavity
Light Emitting Diode Having Electrode Extensions for Current Spreading
Light Emitting Diode
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Light Emitting Element
Light Emitting Device and Method of Fabricating the Same
Gallium Nitride-Based Iii-V Group Compound Semiconductor Device and Method of Manufacturing the Same
Light Emitting Diode Having Electrode Extensions
Light Emitting Diode Having Electrode Pads
Light Emitting Device Having Isolating Insulative Layer for Isolating Light Emitting Cells from Each Other and Method of Fabricating the Same
Light Emitting Diode
Light Emitting Diode Having Electrode Pads
Light Emitting Diode and Method of Fabricating the Same
High Efficiency Light Emitting Diode
Light Emitting Device Having a Plurality of Light Emitting Cells
High Efficiency Light Emitting Diode and Method for Fabricating the Same
Light Emitting Diode Chip Having Distributed Bragg Reflector and Method of Fabricating the Same
Light Emitting Diode Chip and Method of Fabricating the Same
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Light Emitting Device and Method of Fabricating the Same
Light Emitting Device Having a Plurality of Light Emitting Cells and Package Mounting the Same
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Device and Method for Fabricating the Same
High Efficiency Light Emitting Diode and Method for Fabricating the Same
High Efficiency Light Emitting Diode
Light Emitting Device and Method of Fabricating the Same
Light Emitting Diode and Method of Fabricating the Same
Method of Fabricating Light Emiting Diode Chip
Crystalline Aluminum Carbide Thin Film, Semiconductor Substrate Having the Aluminum Carbide Thin Film Formed Thereon and Method of Fabricating the Same
Light Emitting Diode
Light Emitting Diode Having Distributed Bragg Reflector
Method for Forming Ohmic Electrode and Semiconductor Light Emitting Element
Light Emitting Diode Having Modulation Doped Layer
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
High Efficiency Light Emitting Diode and Method of Fabricating the Same
Light Emitting Diode
Method of Fabricating Semiconductor Substrate and Method of Fabricating Light Emitting Device
Method of Fabricating Light Emitting Diode
Light Emitting Device
Light Emitting Device Having a Pluralilty of Light Emitting Cells and Package Mounting the Same
Light Emitting Diode
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Photodetector and Spectrum Detector Having a Semiconductor with Convex Patterns
Application:
13/203,190 →
Publication:
US 2011/0309461
Light Emitting Diode with Improved Luminous Efficiency
Light Emitting Diode Having a Thermal Conductive Substrate and Method of Fabricating the Same
Light Emitting Device and Fabrication Method Thereof
Light Emitting Device and Method of Fabricating the Same
Light Emitting Device Having a Pluralilty of Light Emitting Cells and Package Mounting the Same
Light Emitting Device and Method of Fabricating the Same
Wafer Level Light Emitting Diode Package and Method of Fabricating the Same
Light Emitting Device with Light Emitting Cells Arrayed
Ultraviolet Light Emitting Diode Package
Light Emitting Device and Method of Fabricating the Same
Spectrum Detector Including a Photodector Having a Concavo-Convex Patten
Light Emitting Diode Having Electrode Pads
Illumination System
Light Emitting Device Having Plurality of Non-Polar Light Emitting Cells and Method of Fabricating the Same
Wafer Level Led Package and Method of Fabricating the Same
Non-Polar Light Emitting Diode Having Photonic Crystal Structure and Method of Fabricating the Same
Application:
13/360,471 →
Publication:
US 2013/0026531
Light Emitting Device for Ac Operation
Light Emitting Diode and Method of Fabricating the Same
High-Quality Non-Polar/Semi-Polar Semiconductor Element on Tilt Substrate and Fabrication Method Thereof
Application:
13/392,059 →
Publication:
US 2012/0145991
Light-Emitting Diode Having an Interlayer with High Dislocations Density and Method for Manufacturing the Same
Method of Forming a Non-Polar/Semi-Polar Semiconductor Template Layer on Unevenly Patterned Substrate
Semiconductor Light-Emitting Diode and a Production Method Therefor
Gan Compound Semiconductor Light Emitting Element and Method of Manufacturing the Same
Light Emitting Diode Having a Barrier Layer with a Superlattice Structure
Method of Fabricating Light Emitting Diode Using Laser Lift-Off Technique and Laser Lift-Off Apparatus Having Heater
Light Emitting Diode Package and Method for Manufacturing the Same
Light Emitting Device for Ac Power Operation
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Light Emitting Device Having a Plurality of Non-Polar Light Emitting Cells and a Method of Fabricating the Same
Light Emitting Diode Having Strain-Enhanced Well Layer
High-Quality Non-Polar/Semi-Polar Semiconductor Device on Porous Nitride Semiconductor and Manufacturing Method Thereof
Method of Fabricating Semiconductor Substrate and Method of Fabricating Light Emitting Device
Method of Preparing Semiconductor Layer Including Cavities
Vertical Gallium Nitride-Based Light Emitting Diode and Method of Manufacturing the Same
Light Emitting Diode Having Electrode Pads
Ac Light Emitting Diode and Method for Fabricating the Same
Substrate Assembly for Crystal Growth and Fabricating Method for Light Emitting Device Using the Same
Method of Fabricating Semiconductor Substrate and Method of Fabricating Light Emitting Device
Method of Manufacturing a Compound Semiconductor Substrate in a Flattened Growth Substrate
Light Emitting Diode and Method of Fabricating the Same
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode and Method of Fabricating the Same
Light Emitting Diode Having Distributed Bragg Reflector
Light Emitting Device for Ac Power Operation
Light Emitting Device Having Mgo Pyramid Structure and Method for Fabricating the Same
High Efficiency Light Emitting Diode
Application:
13/812,944 →
Publication:
US 2013/0126829
Uv Light Emitting Diode and Method of Manufacturing the Same
Application:
13/816,140 →
Publication:
US 2013/0207147
Light Emitting Diode with Improved Light Extraction Efficiency
Semiconductor Light Emitting Diode Having Ohmic Electrode Structure and Method of Manufacturing the Same
Light Emitting Diode
Light-Emitting Diode Package and Method of Fabricating the Same
Method of Fabricating Nonpolar Gallium Nitride-Based Semiconductor Layer, Nonpolar Semiconductor Device, and Method of Fabricating the Same
Near Uv Light Emitting Device
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Diode Having Electrode Pads
Light Emitting Device Having a Plurality of Non-Polar Light Emitting Cells and a Method of Fabricating the Same
Crystalline Aluminum Carbide Thin Film, Semiconductor Substrate Having the Aluminum Carbide Thin Film Formed Thereon and Method of Fabricating the Same
Light Emitting Diode Assembly and Method for Fabricating the Same
Light Emitting Diode Chip Having Electrode Pad
Light Emitting Element with a Plurality of Cells Bonded, Method of Manufacturing the Same, and Light Emitting Device Using the Same
Application:
13/922,742 →
Publication:
US 2013/0277682
Method of Fabricating Gallium Nitride-Based Semiconductor Device
Light Emitting Device and Fabrication Method Thereof
Light Emitting Diode Having Photonic Crystal Structure and Method of Fabricating the Same
Laminate Substrate and Method of Fabricating the Same
High Efficiency Light Emitting Diode
Light Emitting Diode Chip
Application:
14/002,975 →
Publication:
US 2013/0334560
Light Emitting Device for Ac Power Operation
Light Emitting Device and Method of Manufacturing the Same
Light Emitting Device Having Vertically Stacked Light Emitting Diodes
Application:
14/021,437 →
Publication:
US 2014/0008671
Method of Fabricating Gallium Nitride Based Semiconductor Device
Wafer Level Led Package and Method of Fabricating the Same
Light Emitting Diode Chip Having Distributed Bragg Reflector and Method of Fabricating the Same
Patterned Substrate for Light Emitting Diode and Light Emitting Diode Employing the Same
Light Emitting Diode
Light Emitting Diode Package and Method for the Same
Application:
61/466,229 →
Light Emitting Diode Having Strain-Enhanced Well Layer
Application:
61/492,541 →
Light Emitting Diode Package and Method for the Same
Application:
61/505,107 →
Light Emitting Diode Package and Method for the Same
Application:
61/552,618 →
Related Assignments
(1)
Other recorded transfers of the patents in this record — the chain of ownership.