Method of fabricating semiconductor substrate and method of fabricating light emitting device

1. A method of fabricating a light emitting device, the method comprising:

preparing a plurality of growth chambers;

preparing a substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer on the substrate in a first growth chamber;

growing a second nitride semiconductor layer

on the first nitride semiconductor layer; and

growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber connected to the first substrate chamber via a communication path.

2. The method of claim 1 , wherein a shutter is disposed between the communication path and the first growth chamber or the second growth chamber.

3. The method of claim 2 , wherein the substrate is transferred from the first growth chamber to the second growth chamber while remaining under vacuum.

4. The method of claim 3 , wherein the growth of the compound semiconductor layers further comprises growing an active layer.

5. The method of claim 4 , wherein the compound semiconductor layers comprise a different material than the first nitride semiconductor layer.

6. The method of claim 5 , wherein the growth of the second nitride semiconductor layer produces reaction by-products.

7. The method of claim 6 , wherein the first nitride semiconductor layer comprises a GaN layer having a thickness of about 2 μm.

8. The method of claim 7 , wherein reaction by-products produced by the growth of the second nitride semiconductor layer contaminates the first growth chamber.

9. The method of claim 6 , wherein the second growth chamber is for a metal organic chemical vapor deposition chamber.

10. The method of claim 6 , further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

11. The method of claim 10 , wherein the patterned layer comprises a plurality of voids.

12. The method of claim 11 , further comprising infiltrating a chemical etchant into the voids.

13. The method of claim 12 , further comprising separating the substrate from one of the nitride semiconductor layers.

14. A method of fabricating a light emitting device, the method comprising:

preparing a plurality of growth chambers;

preparing a first substrate to grow a nitride semiconductor layer;

growing a first nitride semiconductor layer on the first substrate in a first growth chamber;

growing a second nitride semiconductor layer on the first nitride semiconductor layer;

growing compound semiconductor layers on the second nitride semiconductor layer in a second growth chamber, the second growth chamber being connected to the first growth chamber via a communication path;

attaching a second substrate on the compound semiconductor layers; and

separating the first substrate from one of the first and second nitride semiconductor layers.

15. The method of claim 14 , further comprising forming a patterned layer between the first nitride semiconductor layer and the second nitride semiconductor layer.

16. The method of claim 15 , wherein the patterned layer comprises a plurality of voids.

17. The method of claim 16 , wherein the separation of the first substrate comprises infiltrating a chemical etchant into the voids.

18. The method of claim 14 , wherein a shutter is disposed between the first growth chamber and the second growth chamber.

19. The method of claim 18 , wherein the substrate is transferred from the first chamber to the second chamber while remaining under vacuum.