Light-emitting diode package and method of fabricating the same
View Patent ↗A Light Emitting Diode (LED) package and a method of manufacturing the same. The LED package includes a substrate. The substrate defines therein a cavity having a tapered shape, a stepped portion formed on the upper end of the cavity, and a through hole formed in the bottom of the cavity. A conductive film fills the through-hole and is formed on the bottom and the side surfaces of the cavity. An LED has a fluorescent layer thereon, and is flip-chip bonded onto the conductive film. An encapsulant encapsulates the cavity. A Zener diode or a rectifier is provided on the silicon substrate.
1. A light-emitting diode package comprising:
a substrate, wherein the substrate defines therein a cavity having a tapered shape, a stepped portion formed on an upper end of the cavity, and a through hole formed in a bottom of the cavity;
a conductive film, wherein the conductive film fills the through-hole and is formed on the bottom and side surfaces of the cavity, the conductive film not being disposed on the stepped portion;
a light-emitting diode having a fluorescent layer thereon, wherein light-emitting diode is flip-chip bonded onto the conductive film; and
an encapsulant encapsulating the cavity.
2. The light-emitting diode package according to claim 1 , wherein the conductive film is an Al film or an Ag film.
3. The light-emitting diode package according to claim 1 , wherein the conductive film is formed under the stepped portion.
4. The light-emitting diode package according to claim 1 , wherein the substrate is a silicon substrate.
5. The light-emitting diode package according to claim 4 , further comprising a Zener diode formed in an area of the substrate under the cavity.
6. The light-emitting diode package according to claim 4 , wherein the light-emitting diode includes a plurality of light-emitting cells.
7. The light-emitting diode package according to claim 6 , further comprising a rectifier formed on an upper portion of the substrate.
8. The light-emitting diode package according to claim 7 , wherein the rectifier is a diode bridge.
9. A method of fabricating a light-emitting diode package, comprising:
preparing an insulating silicon substrate;
forming a cavity in the silicon substrate and a stepped portion formed in an upper end of the cavity, wherein a light-emitting diode is intended to be mounted in the cavity;
forming a through-hole in a bottom of the cavity;
forming a conductive film only on the through-hole, the bottom, and side surfaces of the cavity, and not on the stepped portion;
flip-chip bonding the light-emitting diode on the conductive film on the bottom of the cavity, wherein the light-emitting diode has a fluorescent layer formed thereon; and
encapsulating the cavity.
10. The method according to claim 9 , wherein the forming a conductive film comprises depositing Al or Ag on the bottom and the side surfaces of the cavity.
11. The method according to claim 10 , wherein the conductive film is formed under the stepped portion.
12. The method according to claim 9 , further comprising forming a Zener diode on the silicon substrate in an area under the cavity after the forming a through-hole.
13. The method according to claim 12 , wherein the Zener diode is formed by ion implantation.
14. The method according to claim 9 , wherein the light-emitting diode includes a plurality of light-emitting cells.
15. The method according to claim 14 , further comprising forming a rectifier on an upper portion of the silicon substrate after the forming a cavity.
16. The method according to claim 15 , wherein the rectifier is formed by bridging diodes on the substrate.