Wafer level light emitting diode package and method of fabricating the same

1. A wafer level light emitting diode package, comprising:

a first substrate comprising:

an insulating-reflecting layer and an electrode pattern arranged on a surface of the first substrate; and

a conductive via;

a terminal on which the first substrate is arranged;

a second substrate arranged on the first substrate, the second substrate comprising a cavity-forming opening, the cavity-forming opening exposing the electrode pattern; and

a light-emitting chip arranged on the electrode pattern,

wherein the light-emitting chip is a flip-chip bonded light-emitting structure without a chip substrate,

wherein the conductive via electrically connects the electrode pattern and the terminal, and

wherein the second substrate and the light-emitting chip are substantially coplanar along a top horizontal surface of the wafer level light emitting diode package.

2. The wafer level light emitting diode package of claim 1 , further comprising a wavelength-converting structure, wherein the wavelength-converting structure comprises a fluorescent layer disposed on a surface of the light-emitting structure, a fluorescent film disposed on a surface of the second substrate and the surface of the light-emitting structure, or a resin fluorescent material arranged in the cavity-forming opening.

3. The wafer level light emitting diode package of claim 1 , wherein the terminal comprises an electrode pad, the electrode pad contacts a first end of the conductive via, and a eutectic electrode arranged on the electrode pad.

4. The wafer level light emitting diode package of claim 1 , wherein each of the second substrate and the first substrate comprises SiC, Si, GaN, or AlN.

5. The wafer level light emitting diode package of claim 1 , wherein a sidewall of the cavity-forming opening comprises a reflective layer.

6. The wafer level light emitting diode package of claim 5 , wherein the insulating-reflecting layer and the reflective layer comprise the same reflective material.

7. The wafer level light emitting diode package of claim 5 , wherein the insulating-reflecting layer and the reflective layer comprise different reflective materials.

8. The wafer level light emitting diode package of claim 1 , wherein the insulating-reflecting layer comprises a distributed Bragg reflector (DBR).

9. The wafer level light emitting diode package of claim 2 ,

wherein the fluorescent film is disposed on the top horizontal surface of the wafer level light emitting diode package.

10. The wafer level light emitting diode package of claim 3 , wherein the electrode pattern contacts a second end of the conductive via.

11. A light emitting diode package, comprising:

a first substrate;

a reflective insulating layer disposed on a first side of the first substrate;

an electrode disposed on the reflective insulating layer;

a terminal disposed on a second side of the first substrate, the first side and the second side of the first substrate being opposite sides of the first substrate;

a conductive via electrically connecting the electrode and the terminal;

a second substrate arranged on the first side of the first substrate, the second substrate comprising an opening exposing the electrode; and

a light-emitting chip arranged on the electrode,

wherein the light-emitting chip is a flip-chip bonded light-emitting structure without a chip substrate, and

wherein the second substrate and the light-emitting chip are substantially coplanar along a top horizontal surface of the light emitting diode package.