Light emitting device and method of fabricating the same
View Patent ↗Disclosed are a light emitting device and a method of fabricating the same. The light emitting device includes a substrate; first and second light emitting cells, each including a first semiconductor layer, an active layer, and a second semiconductor layer; and a connector located between the first and second light emitting cells and the substrate, to electrically connect the first and second light emitting cells to each other. The connector extends from the second semiconductor layer of the first light emitting cell, across the substrate, and through central regions of the second semiconductor layer and active layer of the second light emitting cells, to contact the first semiconductor layer of the second light emitting cell.
1. A light-emitting device, comprising:
a substrate; and
a first light-emitting diode arranged on the substrate, the first light-emitting diode comprising:
a first inclined surface comprising an outside surface of the first light-emitting diode;
a second inclined surface comprising an inside surface of hole in the first light-emitting diode; and
a roughened surface comprising an upper part of the first light-emitting diode,
wherein the length of the second inclined surface is less than the length of the first inclined surface.
2. The light-emitting device of claim 1 , wherein the hole of the first light-emitting diode is arranged at a central region of the first light-emitting diode.
3. The light-emitting device of claim 1 , wherein the roughened surface comprises a third inclined surface of the first light-emitting diode.
4. The light-emitting device of claim 1 , wherein the first light-emitting diode further comprises:
a first-type semiconductor layer;
a second-type semiconductor layer; and
an active layer arranged between the first-type semiconductor layer and the second-type semiconductor layer,
wherein a portion of the first-type semiconductor layer and the active layer are removed, and a portion of the second-type semiconductor layer is exposed.
5. The light-emitting device of claim 4 , further comprising:
a first electrode contacting the first-type semiconductor layer and the substrate; and
a second electrode contacting the exposed portion of the second-type semiconductor layer and the substrate.
6. The light-emitting device of claim 5 , wherein a first portion of the first electrode and a first portion of the second electrode are arranged at the same depth in the substrate, and the first electrode and the second electrode are spaced apart from each other.
7. The light-emitting device of claim 5 , wherein the first electrode comprises a reflector layer and a barrier layer.
8. The light-emitting device of claim 5 , further comprising a second light-emitting diode serially connected to the first light-emitting diode.
9. The light-emitting device of claim 8 , wherein a first end of the second electrode contacts the second-type semiconductor layer of the first light-emitting diode, and a second end of the second electrode contacts the first-type semiconductor layer of the second light-emitting diode.
10. The light-emitting device of claim 5 , further comprising:
a first insulation layer arranged between the first electrode and the second electrode; and
a second insulation layer arranged between a side surface of first-type semiconductor layer and the second electrode.
11. The light-emitting device of claim 10 , wherein the second insulation layer comprises a plurality of holes, and the first electrode and the second electrode respectively contact the first-type semiconductor layer and the second-type semiconductor layer through the holes.
12. The light-emitting device of claim 10 , wherein the first insulation layer comprises a stack of at least two different oxide insulation layers.
13. A light-emitting device, comprising:
a substrate; and
a first light-emitting diode arranged on the substrate, the first light-emitting diode comprising:
a first inclined surface comprising an outside surface of the first light-emitting diode;
a second inclined surface comprising an inside surface of hole in the first light-emitting diode;
a roughened surface comprising an upper part of the first light-emitting diode,
wherein the length of the second inclined surface is less than the length of the first inclined surface;
a first-type semiconductor layer;
a second-type semiconductor layer; and
an active layer arranged between the first-type semiconductor layer and the second-type semiconductor layer,
wherein a portion of the first-type semiconductor layer and the active layer are removed, and a portion of the second-type semiconductor layer is exposed;
a first electrode contacting the first-type semiconductor layer and the substrate;
a second electrode contacting the exposed portion of the second-type semiconductor layer and the substrate;
a first insulation layer arranged between the first electrode and the second electrode; and
a second insulation layer arranged between a side surface of first-type semiconductor layer and the second electrode,
wherein a first portion of the first electrode and a first portion of the second electrode are arranged at the same depth in the substrate, and the first electrode and the second electrode are spaced apart from each other.
14. The light-emitting device of claim 13 , wherein the second insulation layer comprises a plurality of holes, and the first electrode and the second electrode respectively contact the first-type semiconductor layer and the second-type semiconductor layer through the holes.
15. The light-emitting device of claim 13 , wherein the first insulation layer comprises a stack of at least two different oxide insulation layers.
16. The light-emitting device of claim 13 , wherein the first electrode comprises a reflector layer and a barrier layer.
17. The light-emitting device of claim 13 , wherein the hole of the first light-emitting diode is arranged at a central region of the first light-emitting diode.
18. The light-emitting device of claim 13 , wherein the roughened surface comprises a third inclined surface of the first light-emitting diode.
19. The light-emitting device of claim 13 , further comprising a second light-emitting diode serially connected to the first light-emitting diode.
20. The light-emitting device of claim 19 , wherein a first end of the second electrode contacts the second-type semiconductor layer of the first light-emitting diode, and a second end of the second electrode contacts the first-type semiconductor layer of the second light-emitting diode.