High-quality non-polar/semi-polar semiconductor device on porous nitride semiconductor and manufacturing method thereof
View Patent ↗Provided are a high-quality non-polar/semi-polar semiconductor device having reduced defect density of a nitride semiconductor layer and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The method for manufacturing a semiconductor device is to form a template layer and a semiconductor device structure on a sapphire, SiC or Si substrate having a crystal plane for a growth of a non-polar or semi-polar nitride semiconductor layer. The manufacturing method includes: forming a nitride semiconductor layer on the substrate; performing a porous surface modification such that the nitride semiconductor layer has pores; forming the template layer by re-growing a nitride semiconductor layer on the surface-modified nitride semiconductor layer; and forming the semiconductor device structure on the template layer.
1. A method for manufacturing a semiconductor device, the method comprising:
forming a first nitride semiconductor layer on a substrate;
forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution;
forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral crystal growth of the second nitride semiconductor layer completely fills the pores; and
forming a semiconductor device structure on the second nitride semiconductor layer,
wherein upper side surfaces of the pores in the first nitride semiconductor layer form a lateral crystal growth region for growth of the second nitride semiconductor layer, and
wherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of the pores.
2. The method of claim 1 , wherein the first nitride semiconductor layer comprises an In x Al y Ga 1-x-y N (0≦x≦1, 0≦y≦1, 0≦x+y≦1)layer, an undoped GaN layer, an n-type doped GaN layer, or a p-type doped GaN layer.
3. The method of claim 1 , wherein the substrate comprises a sapphire substrate, a SiC substrate, or a Si substrate.
4. The method of claim 1 , wherein the crystal plane of the substrate comprises an A-plane, an M-plane, or an R-plane.
5. The method of claim 1 wherein:
the pores are formed in the first nitride semiconductor layer using the wet etching solution; and
the growth of the first nitride semiconductor layer, and the growth of the second nitride semiconductor layer are performed by a metal organic chemical vapor deposition (MOCVD) process.
6. The method of claim 5 , wherein the wet etching solution comprises a solution containing potassium hydroxide, sodium hydroxide, sulfuric acid, phosphoric acid, nitric acid, or hydrochloric acid in a concentration range of 0.001 M to 2 M.
7. The method of claim 1 , wherein the pores are formed in the first nitride semiconductor layer by using the reactive ion etching process.
8. The method of claim 1 , wherein light having an energy above a band gap of the first nitride semiconductor layer is irradiated on the surface of the first nitride semiconductor layer during formation of the pores in the first nitride semiconductor layer.
9. The method of claim 1 , wherein the semiconductor device comprises a light emitting diode comprising an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer.
10. The method of claim 1 , wherein the semiconductor device comprises an optical device comprising a light emitting diode, a laser diode, a photo detector, or a solar cell, or comprises an electronic device comprising a transistor.
11. A method for manufacturing a semiconductor device, the method comprising:
forming a first nitride semiconductor layer on a substrate;
forming irregular pores in a surface of the first nitride semiconductor layer by etching the first nitride semiconductor layer using a process selected from the group consisting of reactive ion etching and dipping in a wet etching solution;
forming a second nitride semiconductor layer on the first nitride semiconductor layer so as to cover the pores, wherein lateral crystal growth of the second nitride semiconductor layer completely fills the pores; and
forming a semiconductor device structure on the second nitride semiconductor layer,
wherein forming the second nitride semiconductor layer comprises growing the second nitride semiconductor layer laterally outward from top surfaces of the first nitride semiconductor layer respectively disposed between the pores, and
wherein a portion of the second nitride semiconductor layer disposed in the pores is grown from the upper side surfaces of the pores.