Light emitting diode
View Patent ↗The present invention provides a light emitting diode including a lower semiconductor layer formed on a substrate; an upper semiconductor layer disposed above the lower semiconductor layer, exposing an edge region of the lower semiconductor layer; a first electrode formed on the upper semiconductor layer; an insulation layer interposed between the first electrode and the upper semiconductor layer, to supply electric current to the lower semiconductor layer; a second electrode formed on another region of the upper semiconductor layer, to supply electric current to the upper semiconductor layer. The first electrode includes an electrode pad disposed on the upper semiconductor layer and an extension extending from the electrode pad to the exposed lower semiconductor layer. The insulation layer may have a distributed Bragg reflector structure.
1. A light emitting diode, comprising:
a substrate;
a lower semiconductor layer disposed on the substrate;
an upper semiconductor layer disposed on the lower semiconductor layer, such that a portion of the lower semiconductor layer is exposed;
a first electrode disposed on the upper semiconductor layer and directly on the exposed portion of the lower semiconductor layer, to supply electric current to the lower semiconductor layer;
a second electrode formed on the upper semiconductor layer, to supply electric current to the upper semiconductor layer;
a first insulation layer extending from the first electrode to the second electrode; and
a lower insulation layer disposed on a lower surface of the substrate and having a distributed Bragg reflector (DBR) structure.
2. The light emitting diode of claim 1 , wherein the first electrode comprises:
a first electrode pad disposed on the upper surface of the upper semiconductor layer;
an inclined extension extending from the first electrode pad to the exposed portion of the lower semiconductor layer; and
a lower extension extending from the inclined extension and disposed directly on the exposed portion of the lower semiconductor layer.
3. The light emitting diode of claim 2 , wherein:
the upper semiconductor layer and the lower semiconductor layer form a mesa structure having an inclined side surface; and
the inclined extension extends across the inclined side surface, from the upper semiconductor layer to the lower semiconductor layer.
4. The light emitting diode of claim 1 , further comprising a second insulation layer configured to electrically insulate the upper semiconductor layer from a portion of the first electrode that is disposed on upper insulating layer.
5. The light emitting diode of claim 4 , wherein the second insulation layer has a distributed Bragg reflector (DBR) structure.