Light emitting diode
View Patent ↗Disclosed is a light emitting diode (LED) comprising a light emitting stacked structure and an electrode structure formed to have a pattern on the light emitting stacked structure. The electrode structure of the LED includes a cluster of reflectors disposed along the pattern on the light emitting stacked structure, and a pad material layer formed to entirely cover the reflectors.
1. A light emitting diode (LED), comprising:
a light emitting stacked structure; and
an electrode structure comprising an extending pattern disposed on the light emitting stacked structure,
wherein the electrode structure comprises:
reflectors disposed along the pattern on the light emitting stacked structure; and
a pad material layer entirely covering the reflectors,
wherein the reflectors comprise a material having a higher reflectance and a higher insulating property than those of the pad material layer.
2. The LED of claim 1 , wherein the reflectors comprise a distributed Bragg reflector (DBR).
3. The LED of claim 1 , wherein the light emitting stacked structure comprises a p-type region comprising a transparent electrode layer exposed at an upper portion of the stacked structure, and
wherein the reflectors contact a top surface of the transparent electrode layer.
4. The LED of claim 1 , wherein the light emitting stacked structure comprises a n-type region comprising a transparent electrode layer exposed at an upper portion of the stacked structure, and
wherein the reflectors contact a top surface of the transparent electrode layer.
5. The LED of claim 1 , wherein the light emitting stacked structure comprises Group-III nitride-based semiconductor layers.
6. The LED of claim 1 , wherein: the electrode structure comprises extension portions and an electrode pad, the extension portions and the electrode pad comprising the pad material layer; the extension portions extending from the electrode pad in a linear pattern; and the reflectors are arranged in a dot-pattern along the extension portions.
7. The LED of claim 6 , wherein the reflectors further comprise a pad-type reflector disposed under the electrode pad.
8. The LED of claim 1 , wherein the pad material layer comprises a contact material layer directly covering the reflectors, and a bonding material layer positioned at the uppermost portion of the pad material layer.
9. The LED of claim 8 , wherein the contact material layer comprises Cr.
10. The LED of claim 8 , wherein the bonding material layer comprises Au.
11. The LED of claim 8 , wherein the reflectors comprise a material having a higher reflectance and a higher insulating property than that of the contact material layer.