Light emitting diode having electrode pads
View Patent ↗Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
1. A light emitting diode, comprising:
a first type semiconductor layer;
a plurality of second type semiconductor regions disposed on the first type semiconductor layer and spaced apart from each other;
a first electrode pad electrically connected to the first type semiconductor layer;
a second electrode pad electrically connected to the plurality of second type semiconductor regions; and
a plurality of second extensions extending from the second electrode pad and electrically connected to the plurality of second type semiconductor regions, respectively,
wherein at least a portion of the second electrode pad is disposed on a portion of the first type semiconductor layer, on which the second type semiconductor layer regions are not disposed, and
wherein portions of the second electrode pad are disposed on the second type semiconductor regions, respectively.
2. The light emitting diode of claim 1 , further comprising:
an insulation layer disposed between the plurality of second type semiconductor regions and the second electrode pad.
3. The light emitting diode of claim 1 , further comprising:
a first extension extending from the first type semiconductor layer and electrically connected to a first type semiconductor region.
4. The light emitting diode of claim 1 , further comprising:
an insulation layer disposed between the second electrode pad and the first type semiconductor layer.
5. The light emitting diode of claim 1 , wherein the second electrode pad is disposed between the second type semiconductor regions.
6. The light emitting diode of claim 1 , further comprising:
third extensions extending from the second extensions, respectively.
7. The light emitting diode of claim 1 , further comprising:
an insulation layer covering at least portions of side surfaces of the second type semiconductor regions.
8. The light emitting diode of claim 1 , further comprising:
a plurality of transparent electrode layers disposed on the plurality of second type semiconductor regions, respectively,
wherein the second extensions are disposed on the transparent electrode layers, respectively.
9. The light emitting diode of claim 8 , wherein portions of the second electrode pad overlap the plurality of transparent electrode layers, respectively, and an insulation layer is disposed between the overlapping portions of the second electrode pad and the plurality of transparent electrode layers.
10. The light emitting diode of claim 9 , wherein the portions of the second electrode pad comprise connectors.
11. The light emitting diode of claim 1 , wherein the portions of the second electrode pad comprise connectors.