Laser diode having nano patterns and method of fabricating the same
View Patent ↗A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.
1. A laser diode, comprising:
a substrate;
a first conductive-type clad layer disposed on the substrate;
a second conductive-type clad layer disposed on the first conductive-type clad layer;
an active layer interposed between the first conductive-type clad layer and the second conductive-type clad layer; and
column-shaped nano patterns arranged at a surface of the second conductive-type clad layer,
wherein the nano patterns are protruding columns including the second conductive-type clad layer or are recessed portions surrounded by the second conductive-type clad layer on at least two adjacent sides of each nano pattern,
wherein the respective nano patterns are formed in a circular-column shape having a diameter,
wherein the nano patterns are spaced apart from one another at an interval equal to the diameter, and
wherein cleavage mirrors are respectively formed at both opposite side surfaces of the laser diode, and each cleavage mirror is parallel with any one side of a regular triangle defined by three adjacent nano patterns.
2. The laser diode as claimed in claim 1 , wherein the nano patterns are formed by partially etching the second conductive-type clad layer.
3. The laser diode as claimed in claim 1 , wherein the diameter is 100 nm to 250 nm.
4. A laser diode, comprising:
a substrate;
a first conductive-type clad layer disposed on the substrate;
a second conductive-type clad layer disposed on the first conductive-type clad layer;
an active layer interposed between the first conductive-type clad layer and the second conductive-type clad layer; and
column-shaped nano patterns arranged at a surface of the second conductive-type clad layer,
wherein the nano patterns are protruding columns including the second conductive-type clad layer or are recessed portions surrounded by the second conductive-type clad layer on at least two adjacent sides of each nano pattern,
wherein the respective nano patterns are formed in a circular-column shape having a diameter,
wherein the nano patterns are spaced apart from one another at an interval equal to the diameter, and
wherein cleavage mirrors are respectively formed at both opposite side surfaces of the laser diode, and each cleavage mirror makes an angle of intersection with all sides of a regular triangle defined by three adjacent nano patterns.
5. The laser diode as claimed in claim 1 , wherein the nano patterns are formed in a protruding column shape, and a second conductive-type contact layer is disposed on an upper side of the nano patterns.
6. The laser diode as claimed in claim 1 , further comprising a second conductive-type contact layer disposed on the second conductive-type clad layer, wherein the nano patterns are recessed portions disposed in the second conductive-type clad layer through the second conductive-type contact layer.
7. The laser diode as claimed in claim 1 , wherein the laser diode is one of a distributed feedback laser diode, a distributed Bragg reflector laser diode, and a Bragg reflector laser diode.
8. A method for fabricating a laser diode, comprising:
forming semiconductor layers with a laminated structure comprising a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a substrate; and
forming column-shaped nano patterns spaced apart from one another by partially etching the second conductive-type clad layer,
wherein the nano patterns are protruding columns including the second conductive-type clad layer or are recessed portions surrounded by the second conductive-type clad layer on at least two adjacent sides of each nano pattern,
wherein the nano patterns are arranged so that three adjacent nano patterns define a regular triangle, and
wherein cleavage mirrors are respectively formed at both opposite side surfaces of the laser diode by cleaving the substrate, and the cleavage mirrors are parallel with any one side c a regular triangle defined by three adjacent nano patterns.
9. The method as claimed in claim 8 , wherein the nano patterns are formed using a nano imprint technique.
10. The method as claimed in claim 8 , further comprising:
forming a second conductive-type contact layer on the second conductive-type clad layer.
11. A method for fabricating a laser diode, comprising:
forming semiconductor layers with a laminated structure comprising a first conductive-type clad layer, an active layer, and a second conductive-type clad layer on a substrate; and
forming column-shaped nano patterns spaced apart from one another by partially etching the second conductive-type clad layer,
wherein the nano patterns are protruding columns including the second conductive-type clad layer or are recessed portions surrounded by the second conductive-type clad layer on at least two adjacent sides of each nano pattern,
wherein the nano patterns are arranged so that three adjacent nano patterns define a regular triangle, and
wherein cleavage mirrors are respectively formed at both opposite side surfaces of the laser diode by cleaving the substrate, and the cleavage mirrors make an angle of intersection with all sides of a regular triangle defined by three adjacent nano patterns.
12. A laser diode, comprising:
a substrate;
a first conductive-type clad layer disposed on the substrate;
a second conductive-type clad layer disposed on the first conductive-type clad layer;
an active layer interposed between the first conductive-type clad layer and the second conductive-type clad layer; and
column-shaped nano patterns arranged at a surface of the second conductive-type clad layer,
wherein cleavage mirrors are respectively formed at both opposite side surfaces of the laser diode, and
wherein each cleavage mirror is parallel with any one side of a regular triangle defined by three adjacent nano patterns, or each cleavage mirror makes an angle of intersection with all sides of the regular triangle defined by the three adjacent nano patterns.
13. The laser diode as claimed in claim 4 , wherein the nano patterns are formed by partially etching the second conductive-type clad layer.
14. The laser diode as claimed in claim 4 , wherein the diameter is 100 nm to 250 nm.
15. The laser diode as claimed in claim 4 , wherein the nano patterns are formed in a protruding column shape, and a second conductive-type contact layer is disposed on an upper side of the nano patterns.
16. The laser diode as claimed in claim 4 , further comprising a second conductive-type contact layer disposed on the second conductive-type clad layer, wherein the nano patterns are recessed portions disposed in the second conductive-type clad layer through the second conductive-type contact layer.
17. The laser diode as claimed in claim 4 , wherein the laser diode is one of a distributed feedback laser diode, a distributed Bragg reflector laser diode, and a Bragg reflector laser diode.
18. The method as claimed in claim 11 , wherein the nano patterns are formed using a nano imprint technique.
19. The method as claimed in claim 11 , further comprising:
forming a second conductive-type contact layer on the second conductive-type clad layer.