GaN compound semiconductor light emitting element and method of manufacturing the same
View Patent ↗The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact. Furthermore, a P-type electrode is partially formed on a P-GaN layer in a mesh form to thereby maximize the emission of photons generated in the active layer toward the N-GaN layer.
1. A light emitting element, comprising:
a P-type semiconductor layer;
an active layer and an N-type semiconductor layer formed on the P-type semiconductor layer;
an N-type electrode formed on the N-type semiconductor layer;
an insulation film formed on at least a lateral side of the N-type semiconductor layer; and
a metallic protective layer for protecting the P-type semiconductor layer and N-type semiconductor layer.
2. The light emitting element as claimed in claim 1 , wherein the metallic protective layer is formed on lateral sides of the P-type and N-type semiconductor layers and on a bottom side of the P-type semiconductor layer.
3. The light emitting element as claimed in claim 1 , further comprising an insulation layer formed on a part of a bottom side of the P-type semiconductor layer.
4. The light emitting element as claimed in claim 3 , wherein the insulation layer extends to a lateral side of the active layer.
5. The light emitting element as claimed in claim 1 , further comprising an anti-reflective layer formed on the N-type semiconductor layer.
6. The light emitting element as claimed in claim 1 , further comprising a P-type electrode formed beneath the P-type semiconductor layer.
7. The light emitting element as claimed in claim 6 , wherein the P-type electrode includes a contact metallic layer, a reflective metallic layer, a diffusion barrier layer and a bonding metallic layer.