Light emitting device and fabrication method thereof

1. A method of fabricating a vertical light emitting diode (LED), comprising:

forming a low doped first conductive semiconductor layer on a sacrificial substrate;

forming an aluminum layer on a surface of the low doped first conductive semiconductor layer;

forming an anodic aluminum oxide (AAO) layer having a plurality of holes formed therein by performing an anodizing treatment of the aluminum layer;

etching and patterning the low doped first conductive semiconductor layer using the aluminum layer with the plurality of the holes as a shadow mask to expose a portion of the low doped first conductive semiconductor layer, thereby forming a plurality of grooves;

removing the aluminum layer from the low doped first conductive semiconductor layer;

sequentially forming a high doped first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on the low doped first conductive semiconductor layer with the plurality of the grooves;

forming a metal reflective layer and a conductive substrate on the second conductive semiconductor layer;

separating the sacrificial substrate from the low doped first conductive semiconductor layer; and

forming an electrode pad on the other surface of the low doped first conductive semiconductor layer, the electrode pad being filled in a plurality of the grooves to be in ohmic contact with the high doped first conductive semiconductor layer.

2. The method of claim 1 , wherein the doping concentration of dopant in the high doped first conductive semiconductor layer is 5 to 9×10 18 /cm 3 , and the doping concentration of dopant in the low doped first conductive semiconductor layer is below 5×10 18 /cm 3 .