Method of fabricating light emitting diode

1. A method of fabricating a light-emitting diode (LED), the method comprising:

growing a first GaN-based semiconductor layer on a substrate at a first temperature, the growing comprising supplying a chamber with a nitride source gas and a first metal source gas;

stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas;

decreasing a temperature of the substrate to a second temperature after the first time period elapses;

growing an active layer on the first GaN-based semiconductor layer at the second temperature, the growing comprising supplying the chamber with a second metal source gas;

stopping the supply of the second metal source gas; and

increasing the temperature of the substrate from the second temperature to a third temperature during a second time period.

2. The method of claim 1 , wherein the first time period is 3 to 10 minutes long.

3. The method of claim 2 , wherein the LED comprises a leakage current of less than 0.1 μA under a reverse voltage of −5V.

4. The method of claim 1 wherein the second time period is 5 to 15 minutes long.

5. The method of claim 4 , wherein the LED comprises a leakage current of less than 0.05 μA under a reverse voltage of −5V.

6. The method of claim 1 , further comprising growing a second GaN-based semiconductor layer on the active layer at the third temperature by supplying a third metal source gas into the chamber.

7. The method of claim 5 , wherein the third temperature is lower than the first temperature.

8. The method of claim 1 , wherein the first temperature is between 1050 and 1150° C., and the second temperature is between 650 and 750° C.

9. A method of fabricating a light-emitting diode (LED), the method comprising:

growing a first GaN-based semiconductor layer on a substrate at a first temperature, the growing comprising supplying a chamber with a nitride source gas and a first metal source gas;

stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas;

decreasing a temperature of the substrate to a second temperature after the first time period elapses; and

growing an active layer comprising a multiple quantum well structure on the first GaN-based semiconductor layer while maintaining the chamber at the second temperature and supplying the chamber with a second metal source gas.

10. The method of claim 9 , wherein the first time period is 3 to 10 minutes long.

11. The method of claim 10 , wherein the LED comprises a leakage current of less than 0.1 μA under a reverse voltage of −5V.

12. The method of claim 9 , further comprising:

stopping the supply of the second metal source gas; and

increasing the temperature of the substrate from the second temperature to a third temperature during a second time period.

13. The method of claim 12 , wherein the second time period is 5 to 15 minutes long.

14. The method of claim 13 , wherein the LED comprises a leakage current of less than 0.05 μA under a reverse voltage of −5V.

15. The method of claim 12 , further comprising growing a second GaN-based semiconductor layer on the active layer at the third temperature by supplying a third metal source gas into the chamber.

16. The method of claim 14 , wherein the third temperature is lower than the first temperature.

17. The method of claim 9 , wherein the first temperature is between 1050 and 1150° C., and the second temperature is between 650 and 750° C.

18. The method of claim 9 , wherein the multiple quantum well structure comprises a plurality of alternately formed barrier layers and well layers.