OPTICAL DETECTOR AND SPECTRUM DETECTOR
A photodetector and a spectrum detector, which can be miniaturized and do not require a complicated alignment of an optical axis, are disclosed. A photodetector comprises a substrate and a semiconductor that is formed on the substrate and has a plurality of convex portions. The photodetector detects light transmitted through the plurality of convex portions among light incident on the plurality of convex portions. Accordingly, it is possible to detect light with a specific peak wavelength without using an optical component such as a diffraction grating or prism, so that a small-sized photodetector that does not require a complicated alignment of the optical axis in an optical system may be implemented.
1 . A photodetector, comprising:
a substrate; and
a semiconductor formed on the substrate, the semiconductor comprising a plurality of convex portions.
2 . The photodetector of claim 1 ,
wherein the photodetector detects light transmitted through the plurality of convex portions.
3 . The photodetector of claim 1 ,
wherein light incident on the plurality of convex portions is detected through the plurality of convex portions without using diffraction grating or a prism.
4 . The photodetector of claim 3 , wherein the photodetector comprises a plurality of photodetectors.
5 . The photodetector of claim 3 , wherein the convex portions are arranged in a stripe shape in the semiconductor.
6 . A spectrum detector, comprising:
a plurality of photodetectors, each photodetector comprising a substrate; and a semiconductor formed on the substrate, the semiconductor comprising a plurality of convex portions,
wherein at least one of widths, pitches, and heights of the convex portions of the plurality of photodetectors is different from another one of the widths, pitches, and heights of the convex portions, and the spectrum detector detects light transmitted through the plurality of convex portions.
7 . The spectrum detector of claim 6 , wherein the convex portions are arranged in a stripe shape in the semiconductor.
8 . The spectrum detector of claim 7 , wherein photodetectors in the plurality of photodetectors overlap each other.
9 . The photodetector of claim 1 , wherein each of the convex portions is disposed at an apex of a regular triangle.
10 . The spectrum detector of claim 6 , wherein a spectrum distribution of the detected light is identified by configuring the plurality of photodetectors to detect the detected light at different wavelengths.
11 . The photodetector of claim 1 , wherein a convex portion transmits light according to a height, a width, and a pitch of the convex portion.
12 . A method to fabricate a photodetector, the method comprising:
forming a resin on a substrate;
forming a nano-pattern by transferring a nano-pattern on the resin using a mold;
cooling the nano-pattern;
etching the nano-pattern and the substrate,
wherein etching the substrate comprises partially removing at least two layers of the substrate.
13 . The method of claim 12 ,
wherein the substrate comprises:
a first layer;
a gallium-nitride (Ga—N) layer disposed on the first layer; and
a nickel (Ni) layer disposed on the Ga—N layer, and
wherein etching the substrate further comprises:
etching the Ga—N layer and the Ni layer using reactive ion etching.
14 . The method of claim 13 , wherein convex portions comprise the first layer and the Ga—N layer, and
wherein the convex portions is formed by etching, at least partially, the first layer and the Ga—N layer.