Method of fabricating gallium nitride-based semiconductor device
A method of fabricating a gallium nitride (GaN)-based semiconductor device. The method includes preparing a GaN substrate having lower and upper surfaces; growing GaN-based semiconductor layers on the upper surface of the GaN substrate to form a semiconductor stack; forming a support substrate on the semiconductor stack; and separating the GaN substrate from the semiconductor stack. The separating of the GaN substrate includes irradiating a laser from the lower surface of the GaN substrate. The laser is transmitted through the lower surface of the GaN substrate and forms a laser absorption region inside a structure consisting of the GaN substrate and the semiconductor stack.
1. A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising:
growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack;
forming a support substrate on the semiconductor stack;
scanning a laser across a lower surface of the GaN substrate, the laser emitting a laser beam that is focused at focusing positions, such that the focusing positions form a laser absorption region inside a structure comprising the GaN substrate and the semiconductor stack; and
separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device.
2. The method of claim 1 , wherein the laser absorption region is formed inside the GaN substrate, at an interface between the GaN substrate and the semiconductor stack, or inside the semiconductor stack.
3. The method of claim 1 , wherein the laser absorption region has a generally planar shape.
4. The method of claim 2 , wherein the GaN substrate is separated from the semiconductor stack in the laser absorption region.
5. The method of claim 1 , wherein:
the laser has an infrared wavelength; and
the laser beam comprises a pulsed laser beam, each of the beam pulses being focused at one of the focusing positions.
6. The method of claim 1 , wherein the laser comprises a femtosecond or picosecond pulse laser.
7. The method of claim 1 , wherein the semiconductor stack comprises a GaN layer that contacts the GaN substrate.
8. The method of claim 1 , further comprising:
forming a sacrificial layer between the GaN substrate and the semiconductor stack,
wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
9. The method of claim 8 , wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
10. The method of claim 8 , wherein the sacrificial layer comprises silicon carbide, indium nitride, or indium gallium nitride.
11. The method of claim 1 , further comprising polishing a surface of the GaN substrate separated from the semiconductor stack.
12. The method of claim 1 , further comprising reusing the polished GaN substrate as a growth substrate.
13. The method of claim 1 , wherein the semiconductor stack comprises:
a first conductivity-type semiconductor layer;
a second conductivity-type semiconductor layer; and
an active layer disposed between the first and second conductivity-type semiconductor layers,
wherein the GaN-based semiconductor device comprises a light emitting diode.
14. The method of claim 1 , wherein the semiconductor stack has a dislocation density of about 5×10 6 /cm 2 or less.
15. The method of claim 1 , wherein the growing of the GaN-based semiconductor layers comprises using metal organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE).
16. A method of fabricating a gallium nitride (GaN)-based semiconductor device, the method comprising:
growing GaN-based semiconductor layers on an upper surface of a GaN substrate to form a semiconductor stack;
forming a sacrificial layer between the GaN substrate and the semiconductor stack;
forming a support substrate on the semiconductor stack;
scanning a laser across a lower surface of the GaN substrate, the laser emitting a laser beam that is focused a focusing positions, such that the focusing positions form a laser absorption region inside the sacrificial layer; and
separating the GaN substrate from the semiconductor stack to form the GaN semiconductor device,
wherein the sacrificial layer has a bandgap narrower than a bandgap of the GaN substrate.
17. The method of claim 16 , wherein the energy of the laser is lower than the bandgap of the GaN substrate and higher than the bandgap of the sacrificial layer.
18. The method of claim 17 , wherein the sacrificial layer comprises silicon carbide, indium nitride, or indium gallium nitride.
19. The method of claim 1 , wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack.
20. The method of claim 16 , wherein the laser absorption region is formed at an interface between the substrate and the semiconductor stack.