Light emitting device and method for manufacturing the same

1. A method for manufacturing a light emitting device, the method comprising:

forming an n-type nitride semiconductor layer on a substrate;

forming an active layer on the n-type nitride semiconductor layer;

forming an AlN/GaN layer of a super lattice structure by alternately growing an AlN layer and a GaN layer on the active layer; and

forming a p-type nitride semiconductor layer on the AlN/GaN layer of the super lattice structure,

wherein the GaN layer is doped with a p-type dopant, and the AlN layer is a u-AlN layer,

wherein the forming of an AlN/GaN layer of a super lattice structure is performed in a reaction chamber in which NH 3 gas is continually supplied during the forming of the AlN/GaN layer,

wherein the forming of an AlN/GaN layer of a super lattice structure comprises:

(a) supplying source gases comprising an N source gas and an Al source gas into the reaction chamber to grow the AlN layer on the active layer;

(b) supplying NH 3 gas while stopping the growth of the AlN layer by stopping the supply of the Al source gas into the reaction chamber;

(c) supplying a p-type dopant source gas, a Ga source gas, and NH 3 gas into the reaction chamber to grow a p-GaN layer on the AlN layer;

(d) supplying NH 3 gas while stopping the growth of the p-GaN layer by stopping the supply of the p-type dopant source gas and the Ga source gas; and

repeating (a) to (d) until the AlN/GaN layer of the super lattice structure is formed on the active layer,

wherein when the supply of the Al source gas is stopped during growth of the AlN layer, NH 3 gas is continually supplied in the reaction chamber while the Al source gas is discharged from the reaction chamber, and

wherein when the supply of the p-type dopant source gas and the Ga source gas is stopped during growth of the GaN layer, NH 3 gas is continually supplied in the reaction chamber while the p-type dopant source gas and the Ga source gas is discharged from the reaction chamber.

2. The method according to claim 1 , wherein the p-type nitride semiconductor layer is a p-GaN layer.

3. The method according to claim 1 , wherein the GaN layer is thicker than the AlN layer.

4. The method according to claim 1 , wherein the p-type dopant source gas is CP 2 Mg or DMZn.

5. The method according to claim 1 , wherein the AlN/GaN layer of a super lattice structure is formed by alternately growing a single AlN layer and a single GaN layer on the active layer.

6. The method according to claim 1 , wherein the AlN/GaN super lattice structure is formed at a constant temperature.