Method for forming ohmic electrode and semiconductor light emitting element
View Patent ↗The present invention relates to a method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate, sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer, and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer; and a semiconductor light emitting element using the ohmic electrode. According to the present invention, since a reflective layer is formed of Ag, Al and an alloy thereof with excellent light reflectivity, the light availability is enhanced. Further, since contact resistance between a semiconductor layer and a bonding layer is small, it is easy to apply large current for high power.
1. A method of forming an ohmic electrode in a semiconductor light emitting element, comprising:
forming a semiconductor layer having a light emitting structure on a substrate;
sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer; and
forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer,
wherein the protective layer comprises Mg, or Mg alloy comprising one selected from the group consisting of Al, Ag, Zr, Zn, Y, U, TI, Ti, Sn, Si, Sc, Sb, Pu, Pb, Pr, Ni, Na, Mn and mixtures thereof.
2. The method as claimed in claim 1 , wherein an oxide film is formed on at least a portion of the bonding layer in the heat treatment process, when forming the ohmic electrode.
3. The method as claimed in claim 1 , wherein the bonding layer comprises one selected from the group consisting of Ni, Pt, Pd, Ir, Ru, Mo, Rh, Os, Re, W, Ta, TI, Hf, Cr, Co, Nb, Pb and alloys comprising at least one of the foregoing.
4. The method as claimed in claim 1 , wherein the bonding layer comprises one selected from the group consisting of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Al, Ca, Sr, Ba and alloys comprising at least one of the foregoing.
5. The method as claimed in claim 1 , wherein the reflective layer comprises one of Ag, Al and alloys comprising at least one of the foregoing.
6. The method as claimed in claim 1 , wherein the heat treatment process is performed at a temperature of 200 to 500° C. within 30 minutes.
7. The method as claimed in claim 6 , wherein the heat treatment process is performed under an oxygen containing atmosphere.
8. The method as claimed in claim 7 , wherein the oxygen containing atmosphere is any one of an oxygen atmosphere, an oxygen-nitrogen mixture atmosphere, and an oxygen-argon mixture atmosphere.
9. The method as claimed in claim 7 , wherein pressure of the oxygen containing atmosphere is atmospheric pressure or less.
10. A method of forming an ohmic electrode in a semiconductor light emitting element, comprising: forming a semiconductor layer having a light emitting structure on a substrate; sequentially laminating a bonding layer, a reflective layer and a protective layer on the semiconductor layer; and forming an ohmic electrode by performing a heat treatment process to form ohmic bonding between the semiconductor layer and the bonding layer and to form an oxide film on at least a portion of the protective layer, wherein the reflective layer is disposed directly on the bonding layer, and the protective layer is disposed directly on the reflective layer; wherein the protective layer comprises Mg, or Mg alloy comprising one selected from the group consisting of Al, Ag, Zr, Zn, Y, U, TI, Ti, Sn, Si, Sc, Sb, Pu, Pb, Pr, Ni, Na, Mn and mixtures thereof.
11. The method as claimed in claim 10 , wherein an oxide film is formed on at least a portion of the bonding layer in the heat treatment process, when forming the ohmic electrode.
12. The method as claimed in claim 10 , wherein the bonding layer comprises one selected from the group consisting of Ni, Pt, Pd, Ir, Ru, Mo, Rh, Os, Re, W, Ta, TI, Hf, Cr, Co, Nb, Pb and alloys comprising at least one of the foregoing.
13. The method as claimed in claim 10 , wherein the bonding layer comprises one selected from the group consisting of Cu, In, Mg, Zn, Sb, Sn, Li, Be, B, Al, Ca, Sr, Ba and alloys comprising at least one of the foregoing.
14. The method as claimed in claim 10 , wherein the reflective layer comprises one of Ag, Al and alloys comprising at least one of the foregoing.
15. The method as claimed in claim 10 , wherein the heat treatment process is performed at a temperature of 200 to 500° C. within 30 minutes.
16. The method as claimed in claim 15 , wherein the heat treatment process is performed under an oxygen containing atmosphere.
17. The method as claimed in claim 16 , wherein the oxygen containing atmosphere is any one of an oxygen atmosphere, an oxygen-nitrogen mixture atmosphere, and an oxygen-argon mixture atmosphere.
18. The method as claimed in claim 16 , wherein pressure of the oxygen containing atmosphere is atmospheric pressure or less.