Light emitting diode and method of fabricating the same
View Patent ↗Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.
1. A light emitting diode, comprising:
a support substrate;
an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type arranged on the support substrate; and
a metal pattern arranged between the support substrate and the lower semiconductor layer,
the semiconductor layers being grown on a sacrificial substrate and the support substrate being homogeneous with the sacrificial substrate.
2. The light emitting diode of claim 1 , wherein the support substrate comprises sapphire.
3. The light emitting diode of claim 1 , wherein the support substrate comprises a plurality of grooves or through-holes filled with a metal formed in an upper portion or lower portion of the support substrate.
4. The light emitting diode of claim 1 , wherein the metal pattern comprises a reflective metal layer arranged on at least a portion of a lower surface of the lower semiconductor layer, and an intermediate metal layer covering the reflective metal layer.
5. The light emitting diode of claim 4 , wherein the intermediate metal layer comprises a protective metal layer comprising at least one layer.
6. The light emitting diode of claim 4 , wherein the intermediate metal layer comprises a bonding metal layer comprising at least one layer.
7. The light emitting diode of claim 4 , further comprising:
an indium tin oxide (ITO) layer arranged between the lower semiconductor layer and the reflective metal layer.
8. The light emitting diode of claim 1 , wherein the metal pattern comprises:
a reflective metal layer arranged on a lower surface of the lower semiconductor layer; and
an intermediate metal layer arranged between the reflective metal layer and the support substrate,
wherein the lower semiconductor layer is arranged on at least a portion of the reflective metal layer.
9. The light emitting diode of claim 8 , wherein the reflective metal layer comprises at least one Distribution Bragg Reflector (DBR) layer formed therein.
10. The light emitting diode of claim 1 , further comprising:
an electrode pad arranged on at least one of the upper semiconductor layer or the metal pattern.
11. A light emitting diode, comprising:
a support substrate;
a plurality of metal patterns spaced from each other on the support substrate;
a plurality of light emitting cells arranged on at least one region of the respective metal patterns, each light emitting cell comprising an upper semiconductor layer of a first conductive type, an active layer and a lower semiconductor layer of a second conductive type; and
at least one metal wire electrically connecting an upper surface of a first light emitting cell to the metal pattern adjacent to and spaced apart from the upper surface thereof,
the semiconductor layers being grown on a sacrificial substrate and the support substrate being homogeneous with the sacrificial substrate.
12. The light emitting diode of claim 11 , wherein the support substrate comprises sapphire.
13. The light emitting diode of claim 11 , wherein the support substrate comprises a plurality of grooves or through-holes filled with a metal formed in an upper portion or lower portion of the support substrate.
14. The light emitting diode of claim 11 , wherein the metal patterns comprise a reflective metal layer arranged on at least a portion of a lower surface of the lower semiconductor layer, and an intermediate metal layer covering the reflective metal layer.
15. The light emitting diode of claim 14 , wherein the intermediate metal layer comprises a protective metal layer comprising at least one layer.
16. The light emitting diode of claim 14 , wherein the intermediate metal layer comprises a bonding metal layer comprising at least one layer.
17. The light emitting diode of claim 11 , wherein the metal patterns comprise:
a reflective metal layer arranged on a lower surface of the lower semiconductor layer; and
an intermediate metal layer arranged between the reflective metal layer and the support substrate,
the semiconductor layers is arranged on at least a portion of the reflective metal layer.