Light emitting diode having electrode pads
View Patent ↗Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
1. A light emitting diode, comprising:
a substrate;
a first conductive type semiconductor layer arranged on the substrate;
a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer;
an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
a first electrode pad electrically connected to the first conductive type semiconductor layer;
a second electrode pad arranged on the second conductive type semiconductor layer;
an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad; and
at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.
2. The light emitting diode of claim 1 , further comprising an upper connector connecting the at least one upper extension to the second electrode pad, the insulation layer disposed between the second conductive type semiconductor layer and the upper connector.
3. The light emitting diode of claim 2 , wherein the insulation layer covers the second conductive type semiconductor layer, the insulation layer comprises at least one opening on the second conductive type semiconductor layer, and the at least one upper extension is electrically connected to the second conductive type semiconductor layer through the opening.
4. The light emitting diode of claim 2 , further comprising a transparent electrode layer forming an ohmic contact with the second conductive type semiconductor layer, wherein the transparent electrode layer is divided into at least two regions, and the second electrode pad is arranged on an exposed region of the second conductive type semiconductor layer between the at least two regions of the transparent electrode layer.
5. The light emitting diode of claim 4 , wherein a portion of the second electrode pad overlaps the transparent electrode layer, and the insulation layer is disposed between the overlapping portion of the second electrode pad and the transparent electrode layer.
6. The light emitting diode of claim 4 , wherein the upper connector is electrically connected to one of the at least two divided regions of the transparent electrode layer.
7. The light emitting diode of claim 1 , wherein the first electrode pad is arranged to face the second electrode pad.
8. The light emitting diode of claim 7 , further comprising a first lower extension extending from the first electrode pad towards the second electrode pad, the first lower extension being electrically connected to the first conductive type semiconductor layer.
9. The light emitting diode of claim 8 , wherein a distal end of the first lower extension is closer to the second electrode pad than the first electrode pad.
10. The light emitting diode of claim 9 , further comprising a second lower extension extending from the first electrode pad along an edge of the substrate.
11. The light emitting diode of claim 1 , further comprising a transparent electrode layer arranged on the second conductive type semiconductor layer, the transparent electrode layer forming an ohmic contact with the second conductive type semiconductor layer,
wherein the transparent electrode layer is divided into at least two regions, and the second electrode pad is arranged on an exposed region of the second conductive type semiconductor layer between the at least two regions of the transparent electrode layer.
12. The light emitting diode of claim 11 , further comprising at least two upper connectors electrically connected to each of the at least two regions of the transparent electrode layer, respectively.
13. The light emitting diode of claim 12 , wherein one of the at least two upper connectors electrically connects the at least one upper extension to the second electrode pad, insulation layer disposed between each of the at least two upper connectors and the transparent electrode layer.
14. The light emitting diode of claim 13 , wherein the first electrode pad is arranged on the first conductive type semiconductor layer, and the transparent electrode layer and the at least one upper extension are arranged in a symmetrical structure relative to an imaginary line bisecting the first electrode pad and the second electrode pad.
15. The light emitting diode of claim 14 , further comprising a first lower extension extending from the first electrode pad towards the second electrode pad, the first lower extension being electrically connected to the first conductive type semiconductor layer.
16. The light emitting diode of claim 15 , wherein the first lower extension and the at least one upper extension are arranged parallel to one another.
17. The light emitting diode of claim 15 , wherein the insulation layer is arranged on the transparent electrode layer, the insulation layer comprising an opening to expose the transparent electrode layer, and the at least one upper extension is electrically connected to the transparent electrode layer through the opening.