Light emitting device having a plurality of light emitting cells and method of fabricating the same
View Patent ↗Disclosed is a light emitting device having a plurality of light emitting cells. The light emitting device comprises a thermally conductive substrate, such as a SiC substrate, having a thermal conductivity higher than that of a sapphire substrate. The plurality of light emitting cells are connected in series on the thermally conductive substrate. Meanwhile, a semi-insulating buffer layer is interposed between the thermally conductive substrate and the light emitting cells. For example, the semi-insulating buffer layer may be formed of AlN or semi-insulating GaN. Since the thermally conductive substrate having a thermal conductivity higher than that of a sapphire substrate is employed, heat-dissipating performance can be enhanced as compared with a conventional sapphire substrate, thereby increasing the maximum light output of a light emitting device that is driven under a high voltage AC power source. In addition, since the semi-insulating buffer layer is employed, it is possible to prevent an increase in a leakage current through the thermally conductive substrate and between the light emitting cells.
1. A light emitting device having a plurality of light emitting cells, comprising:
a semi-insulating substrate having a thermal conductivity higher than that of a sapphire substrate; and
the plurality of light emitting cells serially connected to one another on the semi-insulating substrate,
wherein the semi-insulating substrate comprises a lower part and an upper part, the lower part comprising an SiC substrate and the upper part comprising an ion implanted semi-insulating SiC layer.
2. The device as claimed in claim 1 , wherein each of the light emitting cells comprises an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, and the N-type semiconductor layer and the P-type semiconductor layer of adjacent light emitting cells are electrically connected in series by means of metallic wiring.
3. The device as claimed in claim 1 , wherein the light emitting cells are formed directly on the ion implanted semi-insulating SiC layer.
4. The device as claimed in claim 2 , wherein the N-type semiconductor layer of each light emitting cell is formed directly on the ion implanted semi-insulating SiC layer.
5. The device as claimed in claim 1 , wherein at least one light emitting cell comprises a first semiconductor layer, an active layer, and a second semiconductor layer, and
wherein the first semiconductor layer and the second semiconductor layer of adjacent light emitting cells are serially connected.
6. The device as claimed in claim 5 , wherein the first semiconductor layer of the at least one light emitting cell is formed directly on the ion implanted semi-insulating SiC layer.