Light emitting diode and method of fabricating the same

1. A method of fabricating a light emitting diode, comprising:

forming a compound semiconductor layer on a substrate, wherein the compound semiconductor layer comprises a lower semiconductor layer, an active layer and an upper semiconductor layer;

forming an electron wax layer on the upper semiconductor layer; and

scratching a surface of the substrate, after the forming of the electron wax layer.

2. A method of fabricating a light emitting diode, comprising:

forming a compound semiconductor layer on a substrate, the compound semiconductor layer comprising a lower semiconductor layer, an active layer, and an upper semiconductor layer;

positioning a solvent comprising an abrasive mixed therein into an ultrasonic cleaning apparatus;

positioning the substrate with the compound semiconductor layer formed thereon in the ultrasonic cleaning apparatus; and

applying ultrasonic waves in the ultrasonic cleaning apparatus to perform the scratching through activation of the abrasive.

3. The method of claim 2 , wherein positioning the substrate comprises positioning the substrate to face downward in the ultrasonic cleaning apparatus.

4. The method of claim 2 , wherein the abrasive comprises a diamond with a diameter of 1 to 20 μm.

5. The method of claim 4 , wherein the diamond has a diameter of 2 to 4 μm.

6. The method of claim 2 , wherein the abrasive comprises a SiC with a diameter of 0.1 to 11.5 μm.

7. The method of claim 6 , wherein the SiC has a diameter of 0.1 to 3 μm.

8. The method of claim 2 , wherein the abrasive comprises one of diamond, SiC, cubic boron nitride (cBN), and diamond like carbon (DLC).

9. The method of claim 2 , further comprising:

forming at least one electrode on the compound semiconductor layer;

forming an insulation layer on the electrode; and

scratching a surface of the insulation layer.

10. A method of fabricating a light emitting diode, comprising:

forming a compound semiconductor layer on a substrate, the compound semiconductor layer comprising a lower semiconductor layer, an active layer, and an upper semiconductor layer;

forming at least one electrode on the compound semiconductor layer;

forming an insulation layer on the electrode; and

rubbing the insulation layer with an abrasive comprising one of diamond, SiC, cubic boron nitride (cBN), and diamond like carbon (DLC).

11. A method of fabricating a light emitting diode, comprising:

forming a compound semiconductor layer on a substrate, the compound semiconductor layer comprising a lower semiconductor layer, an active layer, and an upper semiconductor layer;

forming at least one electrode on the compound semiconductor layer;

forming an insulation layer on the electrode;

positioning a solvent comprising an abrasive mixed therein into an ultrasonic cleaning apparatus;

positioning the substrate with the insulation layer formed thereon in the ultrasonic cleaning apparatus; and

applying ultrasonic waves in the ultrasonic cleaning apparatus to scratch the insulation layer through activation of the abrasive.

12. The method of claim 11 , wherein positioning the substrate comprises positioning the substrate so that the insulation layer faces downward in the ultrasonic cleaning apparatus.

13. The method of claim 10 , wherein forming the insulation layer comprises:

forming the insulation layer on the compound semiconductor layer comprising the at least one electrode formed thereon; and

patterning the insulation layer so that a portion of the at least one electrode is exposed.

14. The method of claim 10 , wherein the insulation layer comprises any one of SiO 2 , SiN x , SiO x , SiO x N y , InSnO x , and BaTiO x .

15. The method of claim 14 , wherein the abrasive comprises diamond with a diameter of 2 to 4 μm.

16. A light emitting diode, comprising:

a substrate comprising an irregularly scratched surface;

a compound semiconductor layer comprising a lower semiconductor layer, an active layer and an upper semiconductor layer disposed on the substrate,

at least one electrode disposed on the compound semiconductor layer; and

an insulation layer disposed on the upper surface of the electrode,

wherein the insulation layer comprises an irregularly scratched surface.

17. A light emitting diode, comprising:

a substrate;

a compound semiconductor layer comprising a lower semiconductor layer, an active layer and an upper semiconductor layer disposed on the substrate;

at least one electrode disposed on the compound semiconductor layer; and

an insulation layer disposed on the upper surface of the electrode,

wherein the insulation layer has an irregularly scratched surface.

18. The light emitting diode of claim 16 , wherein the insulation layer comprises any one of SiO 2 , SiN x , SiO x , SiO x N y , InSnO x and BaTiO x .

19. The light emitting diode of claim 16 , wherein the scratched surface of the insulation layer comprises uneven portions, each uneven portion being sized to be larger than 0 nm and equal to or smaller than 100 nm.

20. The light emitting diode of claim 17 , wherein the insulation layer comprises any one of SiO 2 , SiN x , SiO x , SiO x N y , InSnO x , and BaTiO x .

21. The light emitting diode of claim 17 , wherein the scratched surface of the insulation layer comprises uneven portions, each uneven portion being sized to be larger than 0 nm and equal to or smaller than 100 nm.

22. The method of claim 2 , further comprising forming an electron wax layer on the upper semiconductor layer before the scratching of the surface of the substrate.

23. The method of claim 11 , wherein the forming of the insulation layer comprises:

forming the insulation layer on the compound semiconductor layer comprising the at least one electrode formed thereon; and

patterning the insulation layer so that a portion of the at least one electrode is exposed.