HIGH-QUALITY NON-POLAR/SEMI-POLAR SEMICONDUCTOR ELEMENT ON TILT SUBSTRATE AND FABRICATION METHOD THEREOF
Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.
1 . A method for manufacturing a semiconductor device, the method comprising:
forming a sapphire substrate having a tilted crystal plane; and
forming a template layer on the sapphire substrate, the template layer comprising a nitride semiconductor layer and a GaN layer.
2 . A semiconductor device manufactured by the manufacturing method of claim 1 .
3 . The semiconductor device of claim 2 , wherein the crystal plane of the sapphire substrate includes an A-plane, an M-plane, or an R-plane.
4 . The semiconductor device of claim 2 , wherein the crystal plane of the sapphire substrate is an A-plane, an M-plane, or an R-plane, and is tilted in an A-direction, an M-direction, an R-direction, or a C-direction.
5 . The semiconductor device of claim 2 , wherein the crystal plane of the sapphire substrate is tilted in a range of 0 to 10 degrees with respect to a horizontal plane.
6 . The semiconductor device of claim 2 , wherein the nitride semiconductor layer includes an In x Al y Ga 1-x-y N layer (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
7 . The semiconductor device of claim 2 , wherein the semiconductor device comprises a light emitting diode (LED) including an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer.
8 . The semiconductor device of claim 2 , wherein the semiconductor device comprises an optical device including a light emitting diode, a laser diode, a photo detector, or a solar cell, or comprises an electronic device including a transistor.
9 . A semiconductor device, comprising:
a sapphire substrate with a tilted crystal plane; and
a template layer disposed on the sapphire substrate, the template layer comprising a nitride semiconductor layer and a GaN layer on the sapphire substrate.
10 . The semiconductor device of claim 9 , further comprising:
a light emitting diode (LED) layer disposed on the template layer.
11 . The semiconductor device of claim 9 , wherein the crystal plane of the sapphire substrate includes an A-plane, an M-plane, or an R-plane.
12 . The semiconductor device of claim 9 , wherein the crystal plane of the sapphire substrate is an A-plane, an M-plane, or an R-plane, and is tilted in an A-direction, an M-direction, an R-direction, or a C-direction.
13 . The semiconductor device of claim 9 , wherein the crystal plane of the sapphire substrate is tilted in a range of 0 to 10 degrees with respect to a horizontal plane.
14 . The semiconductor device of claim 9 , wherein the nitride semiconductor layer includes an In x Al y Ga 1-x-y N layer (0≦x≦1, 0≦y≦1, 0≦x+y≦1).
15 . The semiconductor device of claim 9 , wherein the semiconductor device comprises a light emitting diode (LED) including an active layer between an n-type nitride semiconductor layer and a p-type nitride semiconductor layer.
16 . The semiconductor device of claim 9 , wherein the semiconductor device comprises an optical device including a light emitting diode, a laser diode, a photo detector, or a solar cell, or comprises an electronic device including a transistor.
17 . The semiconductor device of claim 10 , wherein the LED layer comprises:
an n-type nitride semiconductor layer disposed on the template layer;
an active layer disposed on the n-type nitride semiconductor layer; and
a p-type nitride semiconductor layer disposed on the active layer.
18 . The semiconductor device of claim 17 , wherein the active layer comprises:
a multi quantum well (MQW) layer; and
an electron blocking layer (EBL) disposed on the MQW layer.
19 . The semiconductor device of claim 18 , wherein the MQW layer comprises a GaN barrier layer and an InGaN well layer.