Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same
View Patent ↗The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
1. A light emitting diode, comprising:
a substrate;
an interlayer insulating layer disposed on the substrate;
a first nitride semiconductor stacked structure disposed on the interlayer insulating layer, the first nitride semiconductor stacked structure comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
a second nitride semiconductor stacked structure disposed on the interlayer insulating layer, the second nitride semiconductor stacked structure comprising a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
at least one wire electrically connected to the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure;
a side insulating layer covering, at least partially, a side surface of the first nitride semiconductor stacked structure and a side surface of the second nitride semiconductor stacked structure, the side insulating layer configured to separate the side surface of the first nitride semiconductor stacked structure and the side surface of the second nitride semiconductor stacked structure from the wire,
wherein the second nitride semiconductor stacked structure is electrically connected to the first nitride semiconductor stacked structure by the wire in reverse parallel.
2. The light emitting diode of claim 1 , wherein a top surface of the first nitride semiconductor stacked structure comprises a light extraction surface, and the top surface of the first nitride semiconductor stacked structure comprises a roughened surface.
3. The light emitting diode of claim 2 , wherein:
the first nitride semiconductor stacked structure further comprises a material layer;
the roughened surface is formed on a surface of the material layer, and the material layer is formed of a homogeneous material with a growth substrate; and
semiconductor layers of the first nitride semiconductor stacked structure are grown on the growth substrate.
4. The light emitting diode of claim 2 , wherein:
the first nitride semiconductor stacked structure further comprises residual portions of a growth substrate; and
the roughened surface is formed on one surface of the residual portions of the growth substrate.
5. The light emitting diode of claim 4 , wherein the growth substrate comprises a Gallium Nitride (GaN) substrate.
6. The light emitting diode of claim 2 , wherein semiconductor layers of the first nitride semiconductor stacked structure, the second nitride semiconductor stacked structure, or both the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure are non-polar or semi-polar nitride-based semiconductor layers.
7. The light emitting diode of claim 6 , further comprising an insulating layer disposed between the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure.
8. The light emitting diode of claim 7 , further comprising a bonding metal interposed between the substrate and the interlayer insulating layer.
9. The light emitting diode of claim 8 , further comprising a reflective layer interposed between the interlayer insulating layer and the first nitride semiconductor stacked structure.
10. The light emitting diode of claim 9 , further comprising a protective metal layer covering the reflective layer.
11. The light emitting diode of claim 10 , wherein a top surface of the insulating layer is at approximately the same height as the light extraction surface.
12. The light emitting diode of claim 11 , wherein the side insulating layer is partially interposed between the first nitride semiconductor stacked structure and the interlayer insulating layer, and between the second nitride semiconductor stacked structure and the interlayer insulating layer.
13. The light emitting diode of claim 1 , wherein semiconductor layers of the first nitride semiconductor stacked structure and the second nitride semiconductor stacked structure comprise nitride-based semiconductor layers, and the nitride-based semiconductor layers have a growth plane other than a c-plane.