Light emitting diode employing an array of nanorods and method of fabricating the same

1. A light emitting diode, comprising:

an array of semiconductor nanorods positioned on a substrate; and

an upper electrode layer deposited on the array such that an empty space remains between adjacent ones of the nanorods,

wherein the upper electrode layer is continuously positioned on the array of semiconductor nanorods and the empty space, and

wherein the upper electrode layer comprises a transparent electrode material.

2. The light emitting diode as claimed in claim 1 , wherein each of the nanorods comprises a first semiconductor nanorod of a first conductive type, a second semiconductor nanorod of a second conductive type, and an active layer interposed between the first and second semiconductor nanorods.

3. The light emitting diode as claimed in claim 1 , wherein the light emitting diode further comprises an upper electrode pad formed on the upper electrode layer.

4. The light emitting diode as claimed in claim 3 , further comprising a lower electrode layer of the first conductive type interposed between the substrate and the array, and a lower electrode pad, wherein the nanorods are grown on the lower electrode layer, the lower electrode layer has an extension portion extending from a side of the array of the nanorods, and the lower electrode pad is formed on the extension portion.

5. The light emitting diode as claimed in claim 3 , further comprising a lower electrode pad formed on a bottom surface of the substrate, wherein the substrate is a conductive substrate.

6. The light emitting diode as claimed in claim 1 , wherein the nanorods are formed at an interval of 200 nm or less on the average.