Light emitting device and method of fabricating the same

1. A light-emitting device, comprising:

a substrate;

a first connection metal disposed on the substrate;

light-emitting regions disposed on the first connection metal, each light-emitting region comprising an upper semiconductor layer, a lower semiconductor layer, and an active layer disposed between the upper and lower semiconductor layers;

a second connection metal electrically connecting adjacent light-emitting regions to each other and comprising openings in which the light-emitting regions are disposed;

a bonding metal disposed between the substrate and the first connection metal, the bonding metal being disposed continuously over an entire area below all of the light-emitting regions;

a first insulation layer disposed on the second connection metal, surrounding the light emitting regions, and comprising openings in which the light-emitting regions are disposed; and

a second insulation layer disposed between the first connection metal and the second connection metal,

wherein the light-emitting regions are connected in parallel by the first connection metal and the second connection metal.

2. The light-emitting device of claim 1 , wherein the first connection metal and the second connection metal are stacked vertically between the light-emitting regions and the substrate.

3. The light-emitting device of claim 1 , wherein the first insulation layer is disposed between side surfaces of the light-emitting regions and the first and second connection metals.

4. The light-emitting device of claim 1 , wherein the upper semiconductor layers each comprise an extension that overlaps the second connection metal.

5. The light-emitting device of claim 4 , wherein in each light-emitting region, the perimeter of the upper surface of the upper semiconductor layer is longer than the perimeter of the active layer.

6. The light-emitting device of claim 1 , wherein:

each upper semiconductor layer has an upper surface and an opposing contact surface; and

the second connection metal directly contacts the contact surfaces.

7. The light-emitting device of claim 1 , wherein the first and second connection metals are not exposed to the outside of the light-emitting device.

8. The light-emitting device of claim 1 , wherein the first connection metal comprises protrusions that extend between the light-emitting regions.

9. The light-emitting device of claim 1 , further comprising a reflective metal layer disposed between the lower semiconductor layer and the substrate and in contact with the lower semiconductor layer.

10. The light-emitting device of claim 1 , wherein the upper surface of each upper semiconductor layer is processed or roughened so as to increase the light extraction efficiency of the light-emitting regions.

11. A light-emitting device, comprising:

a substrate;

a first connection metal disposed on the substrate;

light-emitting regions disposed on the first connection metal;

a second connection metal electrically connecting adjacent light-emitting regions, and comprising openings in which the light-emitting regions are disposed;

a first insulation layer disposed between the first and second connection metals;

a bonding metal disposed between the substrate and the first connection metal, the bonding metal being disposed continuously over an entire area below all of the light-emitting regions; and

a second insulation layer disposed on the second connection metal, surrounding the light emitting regions, and comprising openings in which the light-emitting regions are disposed,

wherein the light-emitting regions are connected in parallel by the first and second connection metals.

12. The light-emitting device of claim 11 , wherein each light-emitting region comprises an upper semiconductor layer, a lower semiconductor layer, an active layer disposed between the upper and lower semiconductor layers, and a reflective metal layer disposed between the lower semiconductor layer and the substrate, the reflective metal layer contacting the lower semiconductor layer.

13. The light-emitting device of claim 12 , wherein each upper semiconductor layer comprises an extension that overlaps and directly contacts the second connection metal.

14. The light-emitting device of claim 12 , wherein the upper semiconductor layer comprises an N-type dopant.

15. The light-emitting device of claim 11 , further comprising:

a first electrode electrically connected to the first connection metal; and

a second electrode electrically connected to the second connection metal,

wherein the first electrode and the second electrode are disposed at a substantially equal height on the same side of the substrate.