IP Library Granted Patent US 7,723,737
Granted Patent B2
US 7,723,737 · App. 12/568,630 · Granted May 25, 2010

Light emitting device

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Quick Facts
Patent No.
US 7,723,737
App. No.
12/568,630
Granted
May 25, 2010
Kind
B2
Abstract

The present invention relates to a light emitting device. According to the present invention, the light emitting device comprises a substrate, a plurality of light emitting cells disposed on the substrate, a first insulation layer disposed on each light emitting cell, an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells, and a second insulation layer disposed on the electrically conductive material. Each light emitting cell comprises a first semiconductor layer, a second semiconductor layer, and an inclined surface. The second insulation layer corresponds to a contour of each light emitting cell.

Claims (36)

1. A light emitting device, comprising:

a substrate;

a plurality of light emitting cells disposed on the substrate, wherein each light emitting cell comprises:

a first semiconductor layer and a second semiconductor layer; and

an inclined surface;

a first insulation layer disposed on each light emitting cell;

an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells; and

a second insulation layer disposed on the electrically conductive material,

wherein the second insulation layer corresponds to a contour of each light emitting cell,

wherein the conductive material is coupled to the first semiconductor layer of one of the two light emitting cells through a first opening formed in the first insulation layer,

wherein the conductive material is coupled to the second semiconductor layer of the other of the two light emitting cells through a second opening formed in the first insulation layer,

wherein the second insulation layer is continuously formed on the entire first semiconductor layer and on the entire second semiconductor layer, and

wherein the second insulation layer comprises a transparent material.

2. The light emitting device of claim 1 , wherein the two of the light emitting cells are connected in series by the electrically conductive material.

3. The light emitting device of claim 2 , wherein the inclined surface of one of the two light emitting cells faces the inclined surface of the other of the two light emitting cells.

4. The light emitting device of claim 1 , wherein the second insulation layer comprises SiO 2 .

5. The light emitting device of claim 4 , wherein the first insulation layer comprises SiO 2 .

6. The light emitting device of claim 1 , further comprising:

Al, Ti, Ag, W, Ta, Ni, Ru, or an alloy thereof disposed on a surface of the substrate opposite to where the light emitting cell is disposed.

7. A light emitting device, comprising:

a substrate;

a plurality of light emitting cells disposed on the substrate, wherein each light emitting cell comprises:

a first semiconductor layer and a second semiconductor layer; and

an inclined surface;

a first insulation layer disposed on each light emitting cell;

an electrically conductive material disposed on the first insulation layer to couple two of the light emitting cells; and

a second insulation layer disposed on the electrically conductive material,

wherein the first insulation layer and the second insulation layer comprise the same transparent material,

wherein the conductive material is coupled to the first semiconductor layer of one of the two light emitting cells through a first opening formed in the first insulation layer,

wherein the conductive material is coupled to the second semiconductor layer of the other of the two light emitting cells through a second opening formed in the first insulation layer, and

wherein the second insulation layer is continuously formed on the entire first semiconductor layer and on the entire second semiconductor layer.

8. The light emitting device of claim 7 , wherein the two of the light emitting cells are connected in series by the electrically conductive material.

9. The light emitting device of claim 8 , wherein the inclined surface of one of the two light emitting cells faces the inclined surface of the other of the two light emitting cells.

10. The light emitting device of claim 7 , wherein the first insulation layer and the second insulation layer comprise SiO 2 .

11. The light emitting device of claim 7 , further comprising:

Al, Ti, Ag, W, Ta, Ni, Ru, or an alloy thereof disposed on a surface of the substrate opposite to where the light emitting cell is disposed.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 22, 2022
From: SEOUL VIOSYS CO., LTD.
To: SINOTECHNIX LLC
Reel/Frame 060594/0991 →
CHANGE OF NAME Recorded Apr 21, 2014
From: SEOUL OPTO DEVICE CO., LTD
To: SEOUL VIOSYS CO., LTD
Reel/Frame 032723/0126 →