Light emitting diode with improved structure
View Patent ↗A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.
1. A light emitting diode (LED), comprising non-polar GaN-based semiconductor layers grown on a non-polar substrate,
wherein the non-polar GaN-based semiconductor layers comprise:
a non-polar N-type semiconductor layer;
a non-polar P-type semiconductor layer; and
non-polar active region layers positioned between the non-polar N-type semiconductor layer and the non-polar P-type semiconductor layer, the non-polar active region layers comprising a well layer and a barrier layer, wherein the barrier layer comprises a superlattice structure,
wherein the well layer comprises In x Ga (1-x) N, and the barrier layer comprises a lower superlattice having In y Ga (1-y) N and GaN alternately laminated, an upper superlattice having In y Ga (1-y) N and GaN alternately laminated, and a middle superlattice interposed between the lower superlattice and the upper superlattice, the middle superlattice having In z Ga (1-z) N and GaN alternately laminated where 0<x<1, 0<y<0.05, 0<z<0.1 and y<z<x.
2. The LED as claimed in claim 1 , wherein the well layer comprises InGaN, the barrier layer comprises a superlattice structure in which an InGaN layer and an GaN layer are alternately laminated, and InGaN in the well layer comprises a larger amount of In than an amount of InGaN in the barrier layer.
3. The LED as claimed in claim 1 , wherein the non-polar active region layers comprise a plurality of well layers and a plurality of barrier layers alternately laminated to form an active region of a multiple quantum well structure.
4. The LED as claimed in claim 1 , wherein the GaN-based semiconductor layers are a-plane GaN-based semiconductor layers grown using an r-plane sapphire substrate or a-GaN substrate as the non-polar substrate.
5. The LED as claimed in claim 2 , wherein the GaN-based semiconductor layers are a-plane GaN-based semiconductor layers grown using an r-plane sapphire substrate or a-GaN substrate as the non-polar substrate.
6. The LED as claimed in claim 1 , wherein the GaN-based semiconductor layers are a-plane GaN-based semiconductor layers grown using an r-plane sapphire substrate or a-GaN substrate as the non-polar substrate.
7. The LED as claimed in claim 3 , wherein the GaN-based semiconductor layers are a-plane GaN-based semiconductor layers grown using an r-plane sapphire substrate or a-GaN substrate as the non-polar substrate.
8. The LED as claimed in claim 1 , wherein the GaN-based semiconductor layers are m-plane GaN-based semiconductor layers grown using an m-plane sapphire substrate or m-GaN substrate as the non-polar substrate.
9. The LED as claimed in claim 2 , wherein the GaN-based semiconductor layers are m-plane GaN-based semiconductor layers grown using an m-plane sapphire substrate or m-GaN substrate as the non-polar substrate.
10. The LED as claimed in claim 1 , wherein the GaN-based semiconductor layers are m-plane GaN-based semiconductor layers grown using an m-plane sapphire substrate or m-GaN substrate as the non-polar substrate.
11. The LED as claimed in claim 3 , wherein the GaN-based semiconductor layers are m-plane GaN-based semiconductor layers grown using an m-plane sapphire substrate or m-GaN substrate as the non-polar substrate.
12. The LED as claimed in claim 1 , wherein the P-type semiconductor layer comprises a P-type clad layer positioned on the active region layers, a hole injection layer positioned on the P-type clad layer, and a P-type contact layer positioned on the hole injection layer.
13. The LED as claimed in claim 12 , wherein a doping concentration of the hole injection layer is lower than a doping concentration of the P-type clad layer, and a doping concentration of the P-type contact layer is higher than the doping concentration of the P-type clad layer.
14. A light emitting diode (LED), comprising non-polar GaN-based semiconductor layers grown on a non-polar substrate,
wherein the non-polar GaN-based semiconductor layers comprise:
a non-polar N-type semiconductor layer;
a non-polar P-type semiconductor layer; and
non-polar active region layers positioned between the non-polar N-type semiconductor layer and the non-polar P-type semiconductor layer, the non-polar active region layers comprising a well layer and a barrier layer, wherein the barrier layer comprises a superlattice structure,
wherein the well layer comprises In x Ga (1-x) N, and the barrier layer comprises a lower superlattice having In y Ga (1-y) N and GaN alternately laminated, an upper superlattice having In y Ga (1-y) N and GaN alternately laminated, and a middle superlattice interposed between the lower superlattice and the upper superlattice, the middle superlattice having In z Ga (1-z) N and GaN alternately laminated, where 0<x<1, 0<y<0.1, 0<z<0.05 and z<y<x.