LIGHT EMITTING DIODE CHIP
The present invention relates to a light-emitting diode chip. According to the present invention, the light-emitting diode chip comprises: a substrate, the thickness of which is greater than 120 μm; and a light-emitting diode provided on the surface of the substrate, at one side thereof.
1 . A light emitting diode chip comprising:
a substrate having a thickness exceeding 120 μm; and
a light emitting diode disposed on one surface of the substrate.
2 . The light emitting diode chip of claim 1 , wherein the substrate has a plurality of protrusions on a side surface thereof.
3 . The light emitting diode chip of claim 1 , wherein the substrate has concavo-convex structures on the other surface thereof.
4 . The light emitting diode chip of claim 1 , wherein the substrate has a thickness from 200 μm to 400 μm.
5 . The light emitting diode chip of claim 1 , wherein the substrate is a transparent substrate.
6 . The light emitting diode chip of claim 5 , wherein light emitted from the light emitting diode is at least partially extracted through the substrate.
7 . The light emitting diode chip of claim 6 , wherein the substrate is a sapphire substrate.