Patterned substrate for light emitting diode and light emitting diode employing the same
View Patent ↗Disclosed herein are a patterned substrate for a light emitting diode and a light emitting diode employing the patterned substrate. The substrate has top and bottom surfaces. Protrusion patterns are arranged on the top surface of the substrate. Furthermore, recessed regions surround the protrusion patterns. The recessed regions have irregular bottoms. Thus, the protrusion patterns and the recessed regions can prevent light emitted from a light emitting diode from being lost due to the total reflection to thereby improve light extraction efficiency.
1. A patterned substrate for a light emitting diode, comprising:
a top surface;
a bottom surface;
protrusion patterns arranged in the top surface; and
recessed regions surrounding the protrusion patterns and having irregular bottoms in the top surface,
the recessed regions comprising a first recessed region and a second recessed region, wherein the first recessed region extends along the substrate in a first direction and the second recessed region extends along the substrate in a second direction crossing the first direction.
2. The substrate as claimed in claim 1 , wherein the substrate is a sapphire substrate.
3. The substrate as claimed in claim 1 , wherein the bottom surface is a flat surface.
4. The substrate as claimed in claim 1 , wherein the recessed regions surrounding each of the protrusion patterns are symmetrical with respect to the relevant protrusion pattern.
5. The substrate as claimed in claim 1 , wherein sidewalls of the recessed regions are formed into inclined surfaces.
6. A light emitting diode, comprising:
a patterned substrate having a top surface, a bottom surface, protrusion patterns arranged in the top surface, and recessed regions surrounding the protrusion patterns and having irregular bottoms in the top surface;
a first conductive type semiconductor layer formed on the top surface of the substrate;
a second conductive type semiconductor layer formed on a region of the first conductive type semiconductor layer; and
an active layer interposed between the first and second conductive type semiconductor layers,
the recessed regions comprising a first recessed region and a second recessed region, wherein the first recessed region extends along the substrate in a first direction and the second recessed region extends along the substrate in a second direction crossing the first direction.
7. The light emitting diode as claimed in claim 6 , further comprising a buffer layer interposed between the substrate and the first conductive type semiconductor layer.
8. The substrate as claimed in claim 1 , wherein each recessed region comprises at least two different depths into the substrate.
9. The substrate as claimed in claim 1 , wherein the second direction is substantially perpendicular to the first direction.
10. The substrate as claimed in claim 1 , wherein the first recessed region comprises a first depth into the substrate and a second depth into the substrate, and the second recessed region comprises a first depth into the substrate and a third depth into the substrate.
11. The substrate as claimed in claim 10 , wherein the protrusion patterns are each surrounded by the first depth, the second depth, and the third depth.
12. The light emitting diode of claim 6 , wherein protrusion patterns do not directly contact the first conductive type semiconductor layer.
13. The light emitting diode of claim 6 , further comprising a layer completely disposed between the protrusion patterns and the first conductive type semiconductor layer.
14. The light emitting diode of claim 6 , wherein each recessed region comprises at least two different depths into the substrate.
15. The substrate as claimed in claim 10 , wherein the first depth of the first recessed region and the first depth of the second recessed region are different.
16. The substrate as claimed in claim 6 , wherein the second direction is substantially perpendicular to the first direction.
17. The substrate as claimed in claim 6 , wherein the first recessed region comprises a first depth into the substrate and a second depth into the substrate, and the second recessed region comprises the first depth into the substrate and a third depth into the substrate.
18. A patterned substrate for a light emitting diode, comprising:
a top surface;
a bottom surface;
protrusion patterns arranged in the top surface; and
recessed regions surrounding the protrusion patterns and having irregular bottoms in the top surface,
wherein the recessed regions comprise a first recessed region and a second recessed region,
wherein the first recessed region extends along the substrate in a first direction and the second recessed region extends along the substrate in a second direction crossing the first direction, and
wherein each recessed region comprises at least two different depths into the substrate.
19. A light emitting diode, comprising:
a patterned substrate having a top surface, a bottom surface, protrusion patterns arranged in the top surface, and recessed regions surrounding the protrusion patterns and having irregular bottoms in the top surface;
a first conductive type semiconductor layer formed on the top surface of the substrate;
a second conductive type semiconductor layer formed on a region of the first conductive type semiconductor layer; and
an active layer interposed between the first and second conductive type semiconductor layers,
wherein the recessed regions comprise a first recessed region and a second recessed region,
wherein the first recessed region extends along the substrate in a first direction and the second recessed region extends along the substrate in a second direction crossing the first direction, and
wherein each recessed region comprises at least two different depths into the substrate.