AC light emitting diode and method for fabricating the same

1. A light emitting device, comprising:

a plurality of light guide portions;

a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions; and

a plurality light emitting regions, each light emitting region comprising:

a first-type semiconductor layer;

a second-type semiconductor layer; and

an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer,

wherein:

each light guide portion of the plurality of light guide portions is surrounded by light emitting regions of the plurality of light emitting regions;

the plurality of light emitting regions comprises a plurality of current regions;

the plurality of current regions comprises a group of parallel connected light emitting regions of the plurality of light emitting regions; and

a light guide portion of the plurality of light guide portions is surrounded by the group of parallel connected light emitting regions.

2. The light emitting device of claim 1 , wherein the refractive index of the reflection prevention substance is 1.3 to 1.7.

3. The light emitting device of claim 1 , further comprising a transparent electrode layer arranged on the first-type semiconductor layer.

4. The light emitting device of claim 1 , wherein the plurality of light guide portions comprises a plurality of semiconductor layers encircling the reflection prevention substance.

5. The light emitting device of claim 1 , wherein the plurality of light guide portions are arranged in a matrix form.

6. The light emitting device of claim 1 , wherein the plurality of current regions comprises a group of serially connected light emitting regions of the plurality of light emitting regions.

7. The light emitting device of claim 1 , wherein the group of parallel connected light emitting regions comprises serially connected light emitting regions.

8. The light emitting device of claim 1 , wherein:

each light guide portion comprises side surfaces separated from the plurality of light emitting regions; and

the side surfaces of each light guide portion are configured to collect light incident in a horizontal direction from adjacent light emitting regions and radiate the light in a vertical direction.

9. The light emitting device of claim 1 , wherein:

each light guide portion is surrounded by the light emitting cells in a matrix pattern; and

the matrix pattern comprises a row direction and a column direction substantially perpendicular to the row direction.

10. The light emitting device of claim 1 , wherein the plurality of light guide portions are arranged in a matrix form.

11. The light emitting device of claim 2 , wherein the reflection prevention substance comprises an oxide or a nitride.

12. The light emitting device of claim 9 , wherein:

each light guide portion is separated from the light emitting cells in the matrix pattern; and

each light guide portion is disposed between two light emitting cells in the row direction and disposed between two light emitting cells in the column direction.

13. A light emitting device, comprising:

a substrate;

a plurality of light guide portions arranged on the substrate;

a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions; and

a plurality of light emitting cells arranged on the substrate,

wherein each light guide portion of the plurality of light guide portions is surrounded by light emitting cells of the plurality of light emitting cells.

14. The light emitting device of claim 13 , wherein each light emitting cell of the plurality of light emitting cells and each light guide portion of the plurality of light guide portions comprises:

a first-type semiconductor layer;

a second-type semiconductor layer; and

an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer.

15. The light emitting device of claim 13 , further comprising a transparent electrode layer arranged on the plurality of the light guide portions and the plurality of light emitting cells.

16. The light emitting device of claim 13 , wherein the inclined surface is vertical to the substrate.

17. The light emitting device of claim 14 , wherein the substrate is exposed at a central portion of each light guide portion of the plurality of light guide portions.

18. The light emitting device of claim 15 , wherein the reflection prevention substance is disposed on the transparent electrode layer on the plurality of light guide portions.

19. The light emitting device of claim 17 , wherein the reflection prevention substance contacts the substrate in the central portion.

20. The light emitting device of claim 17 , wherein a circular shaped portion of the substrate is exposed at the central portion of each light guide portion of the plurality of light guide portions.

21. A light emitting device, comprising:

a plurality of light guide portions;

a reflection prevention substance disposed on an inclined surface of each light guide portion of the plurality of light guide portions; and

a plurality light emitting regions, each light emitting region comprising:

a first-type semiconductor layer;

a second-type semiconductor layer; and

an active layer disposed between the first-type semiconductor layer and the second-type semiconductor layer,

wherein each light guide portion of the plurality of light guide portions is surrounded by a group of parallel connected light emitting regions of the plurality of light emitting regions.

22. The light emitting device of claim 21 , further comprising a transparent electrode layer arranged on the first-type semiconductor layer.

23. The light emitting device of claim 21 , wherein the plurality of light guide portions comprises a plurality of semiconductor layers encircling the reflection prevention substance.