Light emitting device
View Patent ↗The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.
1. A light emitting device, comprising:
at least one first light emitting element comprising at least one light emitting chip and a phosphor, the at least one light emitting chip to emit light having a wavelength in a range from 400 to 500 nm; and
at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength in a range from 560 to 880 nm,
wherein the first light emitting element and the second light emitting element are disposed in a molding member containing the phosphor,
wherein the first light emitting element is disposed in a first molding member containing the phosphor, and the second light emitting element is disposed in a second molding member disposed to cover the first molding member and the second molding member is domed shape,
wherein the phosphor comprises a yellow phosphor,
wherein the at least one second light emitting element is unobstructed, and
wherein the first light emitting element comprises a plurality of light emitting cells, and the plurality of light emitting cells are connected in series to form at least a first array and at least a second array, the first array and the second array being connected in reverse parallel to each other, and the first light emitting element being connected in series or parallel to the second light emitting element.
2. The light emitting device of claim 1 , wherein the first light emitting element is a package type.
3. A light emitting device, comprising:
a substrate;
a plurality of light emitting cells formed on the substrate, each of the light emitting cells comprising a lower semiconductor layer, an upper semiconductor layer disposed on a portion of the lower semiconductor layer, and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer; and
wires electrically connecting the light emitting cells, each of the wires connecting the lower semiconductor layer of one of the light emitting cells to the upper semiconductor layer of another adjacent one of the light emitting cells,
wherein at least one of the plurality of light emitting cells emits light having a wavelength in a range from 560 to 880 nm,
wherein the at least one of the plurality of light emitting cells that emits light having a wavelength in a range from 560 to 880 nm is unobstructed.
4. The light emitting device of claim 3 , wherein the plurality of light emitting cells are connected in series to form at least a first array and at least a second array, and the first array and the second array being connected in reverse parallel to each other.
5. The light emitting device of claim 3 , wherein the light emitting cells except the light emitting cell that emits light having the wavelength in the range from 560 to 880 nm, emit light having a wavelength in a range from 400 to 500 nm.
6. The light emitting device of claim 3 , further comprising a wavelength conversion substance disposed on the outside of the light emitting device, the wavelength conversion substance to convert a wavelength of light emitted from the light emitting device.
7. The light emitting device of claim 6 , wherein the wavelength conversion substance comprises a yellow phosphor.
8. The light emitting device of claim 4 , further comprising a wavelength conversion substance disposed on the outside of the light emitting device, the wavelength conversion substance to convert a wavelength of light emitted from the light emitting device.
9. The light emitting device of claim 5 , further comprising a wavelength conversion substance disposed on the outside of the light emitting device, the wavelength conversion substance to convert a wavelength of light emitted from the light emitting device.
10. The light emitting device of claim 1 , wherein the second molding member does not contain any phosphor.
11. A light emitting device, comprising:
at least one first light emitting element comprising:
a substrate,
a plurality of light emitting cells formed on the substrate, each of the light emitting cells comprising a lower semiconductor layer, an upper semiconductor layer disposed on a portion of the lower semiconductor layer, and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, and
wires electrically connecting the light emitting cells, each of the wires connecting the lower semiconductor layer of one of the light emitting cells to the upper semiconductor layer of another adjacent one of the light emitting cells,
wherein the plurality of light emitting cells emit light having a wavelength in a range from 400 to 500 nm;
at least one second light emitting element disposed adjacent to the plurality of light emitting cells to emit light having a wavelength in a range from 560 to 880 nm,
wherein the first light emitting element and the second light emitting element are disposed in a molding member containing the phosphor,
wherein the phosphor comprises a yellow phosphor.
12. The light emitting device of claim 11 , wherein the plurality of light emitting cells formed on the substrate are flip bonded onto a submount substrate through bumps.
13. The light emitting device of claim 11 , wherein the at least one second light emitting element is unobstructed.