Light emitting diode with improved light extraction efficiency

1. A light emitting diode (LED), comprising:

a substrate;

a light emitting structure disposed on the substrate, the light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer;

a first electrode pad electrically connected to the first semiconductor layer;

a second electrode pad disposed on the substrate;

an insulating reflective layer covering a portion of the light emitting structure, the insulating reflective layer disposed under the second electrode pad so that the second electrode pad is spaced apart from the light emitting structure by the insulating reflective layer;

an upper extension connected to the second electrode pad, the upper extension electrically connected to the second semiconductor layer;

light extraction elements arranged in a pattern and disposed on the second semiconductor layer;

a transparent electrode layer disposed on the second semiconductor layer; and

an insulating layer covering the transparent electrode layer,

wherein:

the insulating layer comprises an opening exposing the transparent electrode layer, and the upper extension is connected to the transparent electrode layer through the opening; and

the first semiconductor layer comprises an n-type nitride semiconductor layer, and the second semiconductor layer comprises a p-type nitride semiconductor layer.

2. The LED of claim 1 , wherein the light extraction elements are disposed on the transparent electrode layer.

3. The LED of claim 1 , wherein the opening is spaced apart from the second electrode pad.

4. The LED of claim 1 , wherein the light extraction elements are disposed on the insulating layer.

5. A light emitting diode (LED), comprising:

a substrate;

a light emitting structure disposed on the substrate, the light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer;

a first electrode pad electrically connected to the first semiconductor layer;

a second electrode pad disposed on the substrate;

an insulating reflective layer covering a portion of the light emitting structure, the insulating reflective layer disposed under the second electrode pad so that the second electrode pad is spaced apart from the light emitting structure by the insulating reflective layer;

an upper extension connected to the second electrode pad, the upper extension electrically connected to the second semiconductor layer; and

light extraction elements arranged in a pattern and disposed on the second semiconductor layer,

wherein the first semiconductor layer comprises an exposed region, the second electrode pad is disposed on the exposed region of the first semiconductor layer, and the insulating reflective layer is disposed between the second electrode pad and the first semiconductor layer and contacts the first semiconductor layer in the exposed region.

6. The LED of claim 5 , wherein the insulating reflective layer covers a portion of exposed side surfaces of the second semiconductor layer and the active layer.

7. The LED of claim 5 , further comprising a connection portion connecting the upper extension and the second electrode pad,

wherein the connection portion is spaced apart from the second semiconductor layer by the insulating layer.

8. A light emitting diode (LED), comprising:

a substrate;

a light emitting structure disposed on the substrate, the light emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer;

a first electrode pad electrically connected to the first semiconductor layer;

a second electrode pad disposed on the substrate;

an insulating reflective layer covering a portion of the light emitting structure, the insulating reflective layer disposed under the second electrode pad so that the second electrode pad is spaced apart from the light emitting structure by the insulating reflective layer;

a first upper extension and a second upper extension connected to the second electrode pad, the first upper extension and the second upper extension electrically connected to the second semiconductor layer; and

light extraction elements arranged in a pattern and disposed on the second semiconductor layer;

transparent electrode layers respectively disposed on the second semiconductor layer in each of the first light emitting area and the second light emitting area; and

an insulating layer covering the transparent electrode layers,

wherein:

the second semiconductor layer and the active layer comprise a first light emitting area and a second light emitting area;

the first upper extension and the second upper extension are electrically connected to the second semiconductor layer and disposed on the first light emitting area and the second light emitting area;

the first upper extension and the second upper extension are connected to the transparent electrode layers, respectively; and

the insulating layer comprises openings exposing the transparent electrode layers, and the first upper extension and the second upper extension are respectively connected to one of the transparent electrode layers through the openings.

9. The LED of claim 8 , wherein the first light emitting area and the second light emitting area are symmetric with respect to a straight line bisecting the first electrode pad and the second electrode pad.

10. The LED of claim 8 , further comprising at least one lower extension connected to the first electrode pad, wherein the at least one lower extension is disposed between the first light emitting area and the second light emitting area.

11. The LED of claim 8 , wherein the light extraction elements are disposed on the transparent electrode layers.

12. The LED of claim 8 , wherein the light extraction elements are disposed on the insulating layer.