Manufacturing method for ferroelectric memory device
View Patent ↗A manufacturing method for a ferroelectric memory device includes: forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode; forming a first hydrogen barrier film that covers the ferroelectric capacitor by a chemical vapor deposition method; forming a dielectric film on the first hydrogen barrier film; forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film; forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by a chemical vapor deposition method; and forming an interlayer dielectric film on the second hydrogen barrier film.
1. A manufacturing method for a ferroelectric memory device, comprising:
forming a ferroelectric capacitor on a substrate, the ferroelectric capacitor including a lower electrode, a ferroelectric film, and an upper electrode;
forming a first hydrogen barrier film that covers the ferroelectric capacitor by an atomic layer deposition method;
forming a dielectric film on the first hydrogen barrier film;
forming a sidewall composed of the dielectric film on a side of the ferroelectric capacitor by etching back the dielectric film;
forming a second hydrogen barrier film on the first hydrogen barrier film and the sidewall by an atomic layer deposition method; and
forming an interlayer dielectric film on the second hydrogen barrier film.
2. A manufacturing method for a ferroelectric memory device according to claim 1 , wherein
the first hydrogen barrier film and the second hydrogen barrier film are composed of aluminum oxide.
3. A manufacturing method for a ferroelectric memory device according to claim 1 , wherein
a heat treatment to the sidewall is conducted between the forming of the sidewall and the forming of the second hydrogen barrier film by a chemical vapor deposition method.