Semiconductor chip
View Patent ↗Provided is a semiconductor chip ( 1 ) including: at least one fuse element ( 21 ); a fuse opening ( 17 ) formed above the fuse element ( 21 ); and a discharge electrode ( 31 ) that is formed below a bottom portion ( 17 a ) of the fuse opening ( 17 ), and is formed in one of the same layer with the fuse element ( 21 ) and the above layer of the fuse element ( 21 ). Accordingly, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be discharged through the discharge electrode ( 31 ). As a result, the current caused to flow due to the electrostatic discharge generated at the time of assembling the semiconductor chip can be prevented from being discharged through the fuse element, whereby a problem in that a functional failure occurs in the semiconductor chip can be solved.
1. A semiconductor chip comprising:
a fuse element;
an insulating film formed over said fuse element;
an opening formed in said insulating film, said opening having a bottom; and
discharge electrode formed below said bottom,
wherein the discharge electrode is formed at a position closer to a carrying region of said chip than the fuse element, said chip being movable when carried at said carrying region.
2. The semiconductor chip according to claim 1 wherein a part of the discharge electrode is formed at an area inside of an outer periphery of said bottom.
3. The semiconductor chip according to claim 1 wherein the discharge electrode is formed between a central portion of the semiconductor chip and the fuse element.
4. The semiconductor chip according to claim 1 wherein the discharge electrode is formed between an outer periphery of the semiconductor chip and the fuse element.
5. The semiconductor chip according to claim 4 , wherein the discharge electrode is formed between said opening and a scribe region.
6. The semiconductor chip according to claim 4 , wherein the discharge electrode is formed between said opening and a region in which a pad is formed.
7. The semiconductor chip according to claim 1 wherein:
the fuse element and the discharge electrode are formed above a semiconductor substrate; and
the discharge electrode is connected to the semiconductor substrate through a contact.
8. The semiconductor chip according to claim 1 wherein said discharge electrode is formed in one of the same layer as the fuse element and a layer above the fuse element.