Image sensor and method for manufacturing the same
View Patent ↗Provided is an image sensor. The image sensor includes a semiconductor substrate, photodiode structures, color filters, and microlenses. The semiconductor substrate includes a first region having pixel regions and a second region around the first region. The pixel regions are arranged in a matrix configuration. Each of the photodiode structures has a photodiode in each of the pixel regions. The color filters are disposed on or over the photodiode structures, the color filters correspond to the pixel regions, respectively, and have different areas corresponding to incident angles of light.
1. An image sensor comprising:
a semiconductor substrate including first and second regions each having pixel regions, the second region around the first region, and the pixel regions having a matrix configuration;
a photodiode in each of the pixel regions;
color filters corresponding to the pixel regions, respectively, wherein a plane area of each of the color filters increases along a direction from the first region to the second region; and
microlenses on the color filters.
2. The image sensor according to claim 1 , wherein plane areas of outermost color filters in the second region are greater than plane areas of the corresponding microlenses.
3. The image sensor according to claim 1 , wherein plane areas of the microlenses are the same as those of the pixel regions.
4. The image sensor according to claim 1 , wherein the plane area of each pixel region is the same as the plane area of each corresponding microlense, and the plane area of the color filters decreases along a direction from the second region to the first region.
5. The image sensor according to claim 1 , wherein the microlenses comprise a first microlens, a second microlens, and a third microlens.
6. The image sensor according to claim 5 , wherein:
the first microlens corresponds to a first photodiode and a first color filter;
the second microlens corresponds to a second photodiode and a second color filter; and
the third microlens corresponds to a third photodiode and a third color filter.
7. The image sensor according to claim 6 , wherein the third color filter has a first plane area, the second color filter has a second plane area smaller than the first plane area, and the first color filter has a third plane area smaller than the second plane area.
8. The image sensor according to claim 1 , wherein each of the pixel regions has a same plane area.
9. The image sensor according to claim 8 , wherein:
each of the color filters in the first region has a first plane area; and
each of the color filters in an outermost region of the second region has a second plane area greater than the first plane area.
10. The image sensor according to claim 1 , wherein an offset between a border of a color filter in a first pixel region and a border between the first pixel region and an adjacent pixel regions is filled with a light absorptive or reflective material.
11. The image sensor according to claim 1 , further comprising an insulating layer on the semiconductor substrate over the photodiode.
12. The image sensor according to claim 11 , further comprising a wiring structure in the insulating layer.
13. The image sensor according to claim 11 , wherein each of the color filters is on a portion of the insulating layer that covers the corresponding photodiode.
14. The image sensor according to claim 1 , wherein the pixel regions each comprise a photodiode and a plurality of transistors.
15. The image sensor according to claim 14 , wherein the plurality of transistors comprise a transfer transistor, a reset transistor, a select transistor, and an access transistor.
16. The image sensor according to claim 1 , wherein the first region and the second region are in the same matrix.