Phase-change memory element
A phase-change memory is provided. The phase-change memory comprises first and second electrodes, wherein the first and second electrodes comprise phase-change material. A conductive path is formed between the first and second electrodes and electrically connects the first and second electrodes, wherein the conductive path comprises an embedded metal layer and a phase-change layer resulting in current from the first electrode to the second electrode or from the second electrode to the first electrode passing through the embedded metal layer and the phase change layer.
1 . A phase-change memory element, comprising:
a first electrode and a second electrode, wherein the first electrode and the second electrode comprise phase-change material; and
a conductive path formed between the first electrode and the second electrode and electrically connected the first electrode and the second electrode, wherein the conductive path comprises a phase-change layer and a embedded metal layer and an electric current passes through the phase-change layer and a embedded metal layer when applying a bias voltage to the phase-change memory element.
2 . The phase-change memory element as claimed in claim 1 , wherein the phase-change layer is a part of the first electrode.
3 . The phase-change memory element as claimed in claim 1 , wherein the phase-change layer is a part of the second electrode.
4 . The phase-change memory element as claimed in claim 1 , wherein the phase-change material comprises chalcogenide.
5 . The phase-change memory element as claimed in claim 1 , wherein the first electrode serves as a top electrode and the second electrode serves as a bottom electrode, and the embedded metal layer directly contacts the first electrode.
6 . The phase-change memory element as claimed in claim 1 , wherein the embedded metal layer comprises Ti-containing compound or cermets.
7 . The phase-change memory element as claimed in claim 1 , wherein the embedded metal layer has a thickness of 1 nm˜200 nm.
8 . The phase-change memory element as claimed in claim 1 , wherein the embedded metal layer has a resistivity of 10 E-1 Ω*cm˜10 E-8 Ω*cm.
9 . A phase-change memory element, comprising:
a substrate;
a first electrode formed on the substrate;
an embedded metal layer formed on the first electrode and electrically connected to the first electrode;
a dielectric layer with an opening formed on the embedded metal layer; and
a second electrode formed on the dielectric layer and electrically connected to the embedded metal layer via the opening, wherein the first electrode and second electrode comprise phase-change material.
10 . The phase-change memory element as claimed in claim 9 , wherein the phase-change material comprises chalcogenide.
11 . The phase-change memory element as claimed in claim 9 , further comprising a pillar of phase-change layer within the opening.
12 . The phase-change memory element as claimed in claim 9 , wherein the embedded metal layer directly contacts to the first electrode.
13 . The phase-change memory element as claimed in claim 9 , wherein the embedded metal layer comprises Ti-containing compound or cermets .
14 . The phase-change memory element as claimed in claim 9 , wherein the embedded metal layer has a thickness of 1 nm˜200 nm.
15 . The phase-change memory element as claimed in claim 9 , wherein the embedded metal layer has a resistivity of 10 E-1 Ω*cm˜10 E-8 Ω*cm.
16 . A phase-change memory element, comprising:
a substrate;
a first electrode formed on the substrate;
a dielectric layer with an opening formed on the first electrode;
an embedded metal layer formed into the opening; and
a second electrode formed on the embedded metal layer, wherein the first electrode and second electrode comprises phase-change material.
17 . The phase-change memory element as claimed in claim 16 , further comprising a pillar of phase-change layer formed into the opening.
18 . The phase-change memory element as claimed in claim 17 , wherein the embedded metal layer is formed on the dielectric layer and electrically connected to the first electrode.
19 . The phase-change memory element as claimed in claim 16 , wherein the phase-change material comprises chalcogenide.
20 . The phase-change memory element as claimed in claim 16 , wherein the embedded metal layer comprises Ti-containing compound or cermets.
21 . The phase-change memory element as claimed in claim 16 , wherein the embedded metal layer has a thickness of 1 nm-200 nm.
22 . The phase-change memory element as claimed in claim 16 , wherein the embedded metal layer has a resistivity of 10 E-1 Ω*cm˜10 E-8 Ω*cm.