METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device comprises: forming a copper interconnect in an insulating film overlying a substrate; and annealing the copper interconnect at a temperature of 300° C. or less. The copper interconnect has a minimum interconnect width of 0.1 μm or less and a maximum interconnect width of 1 μm or less.
1 . A method of manufacturing a semiconductor device, comprising:
forming a copper interconnect in an insulating film overlying a substrate, said copper interconnect having a minimum interconnect width of 0.1 μm or less and a maximum interconnect width of 1 μm or less; and
annealing said copper interconnect at a temperature of 300° C. or less.
2 . The method of manufacturing a semiconductor device as set force in claim 1 , wherein:
said forming a copper interconnect includes forming a copper film constituting said copper interconnect by plating; and
said annealing said copper interconnect is performed immediately after said plating.
3 . The method of manufacturing a semiconductor device as set force in claim 1 , further comprising, by chemical vapor deposition method, forming a second insulating film over said insulating film in which said copper interconnect is formed, after said annealing a copper interconnect,
wherein said annealing a copper interconnect is performed at a temperature equal to or higher than a treatment temperature obtained by said chemical vapor deposition method.
4 . The method of manufacturing a semiconductor device as set force in claim 1 , wherein said annealing said copper interconnect is performed at 250° C. or higher.
5 . The method of manufacturing a semiconductor device as set force in claim 1 , wherein said annealing said copper interconnect includes annealing said copper interconnect which is not connected to a pad.