IP Library Granted Patent US 7,830,740
Granted Patent B2
US 7,830,740 · App. 12/014,990 · Granted Nov 9, 2010

Semiconductor memory device having selectable transfer modes

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Quick Facts
Patent No.
US 7,830,740
App. No.
12/014,990
Granted
Nov 9, 2010
Kind
B2
Abstract

A semiconductor memory device includes a control circuit to control an access to a memory cell according to an input command, a transfer mode setting circuit to hold a transfer mode, an address pin input/output with an address in a first transfer mode and input/output with data in a second transfer mode and a switching circuit to switch a connection destination of the address.

Claims (32)

1. A semiconductor memory device comprising:

a control circuit which controls access to a memory cell according to an input command;

a transfer mode setting circuit which holds a transfer mode, by which a transfer manner of data stored or to be stored in the memory cell is determined, according to a command from the control circuit;

an address pin which inputs an address in a first transfer mode and inputs or outputs data in a second transfer mode;

a data pin which inputs or outputs data in both the first and second transfer modes;

a switching circuit which switches a connection destination of the address pin between an address buffer and an input/output buffer according to the transfer mode; and

a data controller which processes data such that said data is to be transferred through the data pin or through both the address pin and the data pin according to the transfer mode, wherein

the data controller outputs first data such that said first data is to be transferred through the data pin in the first transfer mode, and outputs second data such that said second data is to be transferred through both the data and address pins in the second transfer mode.

2. The semiconductor memory device according to claim 1 , wherein the control circuit outputs a signal which specifies the first transfer mode or the second transfer mode to the transfer mode setting circuit according to an input command.

3. The semiconductor memory device according to claim 1 , wherein the semiconductor memory device is a synchronous semiconductor memory device.

4. The semiconductor memory device according to claim 2 , wherein the semiconductor memory device is a synchronous semiconductor memory device.

5. The semiconductor memory device according to claim 1 , further comprising a mode specification pin for specifying a connection destination of the address pin, the address pin being connected with the switching device.

6. The semiconductor memory device according to claim 2 , further comprising a mode specification pin for specifying a connection destination of the address pin, the address pin being connected with the switching device.

7. The semiconductor memory device according to claim 3 , further comprising a mode specification pin for specifying a connection destination of the address pin, the address pin being connected with the switching device.

8. A memory device comprising:

a transfer mode setting circuit which holds a transfer mode, by which a transfer manner of data stored or to be stored in a memory cell is determined, according to a command;

a plurality of data input/output pins which input or output data in both first and second transfer modes;

a plurality of data address pins which input an address in the first transfer mode and input or output data in the second transfer mode; and

a switching circuit which switches the connection destination of the plurality of data address pins between an address buffer and an input/output buffer according to the transfer mode; and

a data controller which processes data such that said data is to be transferred through the data pin or through both the address pin and the data pin according to the transfer mode, wherein

the data controller outputs first data such that said first data is to be transferred through the data pin in the first transfer mode, and outputs second data such that said second data is to be transferred through both the data and address pins in the second transfer mode.

9. The memory device according to claim 8 , wherein the switching circuit switches the function of the plurality of data address pins in accordance with a mode setting command.

10. The semiconductor memory device according to claim 1 , wherein

the data controller is coupled between the input/output buffer and the memory cell.

11. The semiconductor memory device according to claim 1 , wherein

the data controller is coupled to the address pin and the data pin through the input/output buffer.

12. The semiconductor memory device according to claim 1 , wherein

the first transfer mode is a random transfer mode, and the second transfer mode is a mass transfer mode.

13. The semiconductor memory device according to claim 1 , further comprising:

a pin through which the input command is input to the semiconductor memory device.

14. The semiconductor memory device according to claim 1 , wherein

the switching circuit connects the address pin with the address buffer in the first transfer mode, and connects the address pin with the input/output buffer in the second transfer mode.

Assignments (2)
CHANGE OF NAME Recorded Nov 2, 2010
From: NEC ELECTRONICS CORPORATION
To: RENESAS ELECTRONICS CORPORATION
Reel/Frame 025235/0423 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 16, 2008
From: TAKANO, SUSUMU
To: NEC ELECTRONICS CORPORATION
Reel/Frame 020373/0338 →