Semiconductor device
View Patent ↗A semiconductor device ( 1 ) includes a wiring ( 10 ) and dummy conductor patterns ( 20 ). The wiring ( 10 ) is a wiring through which a current with a frequency of 5 GHz or higher flows. Near the wiring ( 10 ), the dummy conductor patterns ( 20 ) are formed. A planar shape of each of the dummy conductor patterns ( 20 ) is equivalent to a shape with an internal angle larger than 180°.
1. A semiconductor device, comprising:
a wiring; and
first dummy conductor patterns formed at a first region near the wiring, each of the first dummy conductor patterns is separated from each other,
wherein a planar shape of each of the first dummy conductor patterns is equivalent to a shape with an internal angle larger than 180° .
2. The semiconductor device according to claim 1 , wherein a high frequency signal flows through said wiring.
3. The semiconductor device according to claim 2 , wherein said high frequency signal has a frequency of 5 GHz or higher.
4. The semiconductor device according to claim 1 , further comprising second dummy conductor patterns that are formed at a second region far from the wiring as compared with the first region.
5. The semiconductor device according to claim 4 , wherein a data ratio in the first region is smaller than a data ratio in the second region.
6. The semiconductor device according to claim 1 , wherein the wiring comprises an inductor.
7. The semiconductor device according to claim 1 , wherein the planar shape of each of the first dummy conductor patterns is equivalent to a shape with an internal angle of 270° .
8. The semiconductor device according to claim 1 , wherein the planar shape of each of the first dummy conductor patterns is equivalent to a shape obtained by removing, from a first rectangle, a second rectangle having an area smaller than that of the first rectangle.
9. The semiconductor device according to claim 8 , wherein the second rectangle is positioned at a corner of the first rectangle.
10. The semiconductor device according to claim 9 , wherein the planar shape of each of the first dummy conductor patterns is a cross shape.
11. The semiconductor device according to claim 9 , wherein the planar shape of each of the first dummy conductor patterns is an L-shape.
12. The semiconductor device according to claim 8 , wherein one side of the second rectangle is in contact with one side of the first rectangle.
13. The semiconductor device according to claim 12 , wherein the planar shape of each of the first dummy conductor patterns is a U-shape.
14. A semiconductor device comprising an interconnection conductor and a plurality of dummy conductor patterns arranged around the interconnection conductor, each of the dummy conductor patterns has a polygonal shape with at least one dent which is provided at a part of a periphery of the polygonal shape, and each of said dummy conductor patterns is separated from each other.
15. The semiconductor device according to claim 14 , wherein the polygonal shape is one of a square and a rectangle and the dent is one of a square and a rectangle.
16. The semiconductor device according to claim 15 , wherein four dents each having one of a square and a rectangle are provided respectively at four corners of the polygonal shape having one of a square and a rectangle.
17. The semiconductor device according to claim 14 , wherein the polygonal shape is one of a square and a rectangle and the dent is a triangle.
18. The semiconductor device according to claim 14 , wherein the interconnection conductor is a first interconnection conductor and each of the dummy conductor patterns is a first dummy conductor pattern, the device further comprising a second interconnection conductor and a plurality of second dummy conductor patterns, each of the second dummy conductor patterns has a polygonal shape without a dent.
19. The semiconductor device according to claim 18 , the polygonal shape of each of the first and second dummy conductor patterns is one of a square and a rectangle and the dent is one of a square and a rectangle.
20. The semiconductor device according to claim 18 , the polygonal shape of each of the first and second dummy conductor patterns is one of a square and a rectangle and the dent is a triangle.
21. The semiconductor device according to claim 1 , wherein said first dummy conductor patterns are arranged in a matrix state.
22. The semiconductor device according to claim 14 , wherein said dummy conductor patterns are arranged in a matrix state.