Plasma processing apparatus and method for controlling the same
View Patent ↗A plasma processing apparatus includes a vacuum vessel, first, second and third power supplies which supply first, second and third RF voltages, a first electrode disposed within the vacuum vessel, a second electrode disposed inside or outside the vacuum vessel, a phase control unit for controlling the phase difference of the second and third RF voltages, wherein the second and third RF voltages are of the same frequency, and a RF radiation unit which is supplied with the third RF voltage. The apparatus further comprises a voltage detector, and the phase control unit computes a phase difference between the second and third RF voltages based upon an output of the voltage detector.
1. A plasma processing apparatus comprising:
a vacuum vessel delimiting a vacuum chamber in which plasma is generated;
a first RF power supply, a second RF power supply and a third RF power supply provided outside the vacuum vessel;
a coil antenna disposed outside the vacuum vessel to which a first RF voltage from the first RF power supply is supplied;
a Faraday shield separated from the vacuum chamber by a dielectric window and being capacitively coupled with the plasma generated in the vacuum chamber;
an electrode disposed inside the vacuum vessel, having an upper surface on which a sample is mounted, and to which a second RF voltage from the second RF power supply is supplied;
a phase control unit for controlling a phase difference between the second RF voltage and a third RF voltage from the third RF power supply, the second RF voltage and the third RF voltage having a same frequency;
means for detecting a potential of the RF being transmitted through the plasma at an inner wall surface of the vacuum vessel; and
means for detecting an emission status of the plasma within the vacuum vessel;
wherein the third RF voltage from the third RF power supply is supplied to the Faraday shield;
wherein the phase difference between the second RF voltage and the third RF voltage having a same frequency is controlled using a signal source other than a phase signal; and
wherein the phase control unit is configured to compute a phase difference between the second RF voltage and the third RF voltage based on a relationship between the potential of the RF being transmitted through the plasma at the inner wall surface of the vacuum vessel and the phase difference between the second RF voltage and the third RF voltage or a relationship between an emission status of the plasma within the vacuum vessel and the phase difference between the second RF voltage and the third RF voltage.
2. The plasma processing apparatus according to claim 1 , wherein the signal source other than the phase signal is a combination of the detected potential of the RF being transmitted through the plasma at the inner wall surface of the vacuum vessel and the detected emission status of the plasma within the vacuum vessel.
3. A plasma processing apparatus comprising:
a vacuum vessel delimiting a vacuum chamber in which plasma is generated;
a first RF power supply, a second RF power supply and a third RF power supply provided outside the vacuum vessel;
a coil antenna disposed outside the vacuum vessel to which a first RF voltage from the first RF power supply is supplied;
a Faraday shield separated from the vacuum chamber by a dielectric window and being capacitively coupled with the plasma generated inside the vacuum chamber;
an electrode disposed inside the vacuum vessel, having an upper surface on which a sample is mounted, and to which a second RF voltage from the second RF power supply is supplied; and
a phase control unit configured to control a phase difference between the second RF voltage from the second RF power supply and a third RF voltage from the third RF power supply, the second RF voltage and the third RF voltage having a same frequency;
wherein the third RF voltage from the third RF power supply is supplied to the Faraday shield.