Low-power CAM cell

1. A CAM memory cell, comprising:

an SRAM cell adapted to store a bit;

a data line adapted to provide a corresponding comparand bit;

an XOR gate adapted to XOR the stored bit and the comparand bit to provide an XOR output, and

a switch adapted to close in response to the XOR output.

2. The CAM memory cell of claim 1 , further comprising a complement data line for providing a complement of the corresponding compared bit, and wherein the XOR gate comprises a first PMOS transistor and a second PMOS transistor having a common drain with the first PMOS transistor, the first PMOS transistor having a source coupled to a q node for the SRAM cell and a gate driven by the data line, the second PMOS transistor having a source coupled to a q complement node for the SRAM cell and a gate driven by the complement data line.

3. The CAM memory cell of claim 1 , further comprising a complement data line for providing a complement of the corresponding comparand bit, wherein the switch comprises an NMOS transistor and the XOR gate comprises a first PMOS transistor and a second PMOS transistor having a common terminal driving a gate of the NMOS transistor, the first PMOS transistor having a gate driven by a q node for the SRAM cell and another terminal coupled to the data line, the second PMOS transistor having a gate driven by a q complement node for the SRAM cell and another terminal coupled to the complement data line.

4. The CAM memory cell of claim 1 , further comprising a bit line for writing to the SRAM cell.

5. The CAM memory cell of claim 4 , wherein the bit line and the data line comprise the same line.

6. The CAM memory cell of claim 4 , wherein the bit line and the data line are separate.

7. The CAM memory cell of claim 1 , further comprising a masking SRAM cell, wherein the XOR gate is adapted to provide the XOR output only if a stored bit in the masking SRAM cell is true.