Semiconductor light-emitting device
View Patent ↗A semiconductor light-emitting device includes: a light-emitting semiconductor element arranged on a lead frame; a transparent resin mold covering the light-emitting semiconductor element and the lead frame except a terminal portion of the lead frame; and a reflective surface formed on a bent portion of part of the lead frame. The terminal portion of the lead frame has a terminal structure, which can serve as a combination of a top-view type and a side-view type.
1. A semiconductor light-emitting device, comprising:
a light-emitting semiconductor element formed in a rectangular shape having long and short sides in a plan view;
a first reflective surface formed by bending both ends of a lead frame in a longitudinal direction diagonally upward;
a second reflective surface formed by bending both ends of the lead frame in a widthwise direction diagonally upward, the second reflective surface being adjacent to and facing to both surfaces of said light-emitting semiconductor element in the longitudinal direction;
a storage portion formed on the lead frame to place and hold thereon said light-emitting semiconductor element such that the longitudinal direction thereof extends along the longitudinal direction of the lead frame, said storage portion being surrounded by said first and second reflective surfaces;
a terminal portion formed by bending both ends of the lead frame in the longitudinal direction to be parallel with said storage portion, the terminal portion having a terminal structure and serving as a combination of a top-view type and a side-view type;
a transparent resin mold covering said light-emitting semiconductor element and the lead frame, except said terminal portion of the lead frame.
2. The semiconductor light-emitting device according to claim 1 , wherein said terminal portion of said lead frame is L-shaped in a plan view.
3. The semiconductor light-emitting device according to claim 1 , further comprising:
a protective diode arranged in a depressed portion of said lead frame, wherein an upper surface of said protective diode is located below an arrangement plane of said lead frame on which said light-emitting semiconductor element is arranged.
4. The semiconductor light-emitting device according to claim 3 , wherein an electrode on the upper surface of said protective diode is formed on the whole surface except a marginal region for securing pressure resistance of said protective diode.
5. The semiconductor light-emitting device according to claim 1 , wherein three light-emitting semiconductor elements, respectively, for red light emission, green light emission, and blue light emission are arranged on said lead frame.
6. The semiconductor light-emitting device according to claim 1 , wherein a light-emitting semiconductor element for monochromatic light emission is placed on said lead frame, and said light-emitting semiconductor element for monochromatic light emission is covered with a fluorescent layer.