METHOD OF REMOVING NANOCRYSTALS
A method for forming a semiconductor structure includes providing a semiconductor layer, forming nanocrystals over the semiconductor layer, and using a solution comprising pure water, hydrogen peroxide, and ammonium hydroxide to remove at least a portion of the nanocrystals. A ratio by volume of pure water to ammonium hydroxide of the solution may be equivalent to or less than a ratio by volume of 10:1 of pure water to ammonium hydroxide when ammonium hydroxide has a concentration of 29% ammonia by weight. The step of using the solution to remove the at least a portion of the nanocrystals may be performed at a temperature of 50 degrees Celsius or more.
1 . A method for forming a semiconductor structure, the method comprising:
providing a semiconductor layer;
forming nanocrystals over the semiconductor layer; and
using a solution comprising pure water, hydrogen peroxide, and ammonium hydroxide to remove at least a portion of the nanocrystals performed at a temperature of more than 50 degrees Celsius, wherein equal parts of ammonium hydroxide and hydrogen peroxide are used.
2 . The method of claim 1 , wherein a ratio by volume of pure water to ammonium hydroxide of the solution is equivalent to or less than a ratio by volume of 10:1 of pure water to ammonium hydroxide when ammonium hydroxide has a concentration of 29% ammonia by weight.
3 - 4 . (canceled)
5 . The method of claim 1 , wherein the nanocrystals comprise silicon.
6 . The method of claim 1 , further comprising:
forming an oxide layer over the semiconductor layer, wherein the forming the nanocrystals over the semiconductor layer comprises forming the nanocrystals directly on the oxide layer.
7 . The method of claim 6 , wherein an average diameter of the nanocrystals is greater than an average thickness of the oxide layer.
8 . The method of claim 1 , wherein a ratio by volume of water to ammonium hydroxide to hydrogen peroxide of the solution is x:1:1 where x is 10 or less, wherein the ammonium hydroxide of the solution has a concentration of 29% ammonia by weight and the hydrogen peroxide of the solution has a concentration of 30% by weight.
9 . A method for forming a semiconductor structure comprising:
providing a semiconductor layer;
forming a gate dielectric over the semiconductor layer;
forming a select gate over the gate dielectric;
forming nanocrystals over the select gate and the semiconductor layer;
forming a control gate over the nanocrystals; and
using a solution at a temperature above 50 degrees Celsius comprising water, hydrogen peroxide, and ammonium hydroxide to remove exposed portions of the nanocrystals, wherein the solution comprises equal parts of hydrogen peroxide and ammonium hydroxide.
10 . The method of claim 9 , wherein a ratio by volume of pure water to ammonium hydroxide of the solution is equivalent to or less than a ratio by volume of 10:1 of pure water to ammonium hydroxide when ammonium hydroxide has a concentration of 29% ammonia by weight.
11 - 12 . (canceled)
14 . The method of claim 9 , further comprising:
forming a tunnel oxide over the semiconductor layer and along a sidewall of the select gate, wherein forming the nanocrystals over the select gate and the semiconductor layer comprises forming the nanocrystals over the tunnel oxide.
15 . A method for forming a semiconductor structure, the method comprising:
providing a semiconductor layer;
forming silicon nanocrystals over the semiconductor layer; and
using a solution comprising water, hydrogen peroxide, and ammonium hydroxide to remove at least a portion of the silicon nanocrystals, wherein a temperature of the solution is more than 50 degrees Celsius and a ratio by volume of pure water to ammonium hydroxide of the solution is equivalent to or less than a ratio by volume of 10:1 of pure water to ammonium hydroxide when ammonium hydroxide has a concentration of 29% ammonia by weight or less and the solution has equal parts hydrogen peroxide and ammonium hydroxide.
16 . The method of claim 15 , wherein the temperature of the solution is 60 degrees Celsius or more.
17 . The method of claim 15 , wherein a ratio by volume of water to ammonium hydroxide to hydrogen peroxide of the solution is x:1:1 where x is 10 or less, wherein the ammonium hydroxide of the solution has a concentration of 29% ammonia by weight and the hydrogen peroxide of the solution has a concentration of 30% by weight.
18 . The method of claim 15 , further comprising:
forming an oxide layer over the semiconductor layer, wherein the forming the silicon nanocrystals over the semiconductor layer comprises forming the silicon nanocrystals directly on the oxide layer.
19 . The method of claim 18 , wherein an average diameter of the silicon nanocrystals is greater than an average thickness of the oxide layer.
20 . The method of claim 15 , further comprising:
forming a gate dielectric over the semiconductor layer;
forming a select gate over the gate dielectric layer;
forming a tunnel oxide over the semiconductor layer and a sidewall of the select gate, wherein the forming the silicon nanocrystals over the semiconductor layer comprises forming the silicon nanocrystals over the tunnel oxide; and
forming a control gate over the nanocrystals, wherein the using the solution comprising water, hydrogen peroxide, and ammonium hydroxide to remove at least a portion of the silicon nanocrystals is performed after the forming the control gate to remove exposed portions of the silicon nanocrystals.