Sub-lithographic dimensioned air gap formation and related structure
View Patent ↗Sub-lithographic dimensioned air gap formation and related structure are disclosed. In one embodiment, a method includes forming a dielectric layer including interconnects on a substrate; depositing a cap layer on the dielectric layer; depositing a photoresist over the cap layer; patterning the photoresist to include a first trench pattern at most partially overlying the interconnects; forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension; transferring the second trench pattern into the cap layer and into the dielectric layer between the interconnects; and depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.
1. A method comprising:
forming a dielectric layer including interconnects on a substrate;
depositing a cap layer on the dielectric layer, wherein the cap layer includes at least three cap layers and one of the at least three cap layers includes a silicon carbide layer;
depositing a photoresist over the cap layer;
patterning the photoresist to include a first trench pattern at most partially overlying the interconnects;
forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension;
transferring the second trench pattern into the cap layer and into the dielectric layer, such that a trench is formed between the interconnects; and
depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.
2. The method of claim 1 , further comprising removing all of the cap layers except one prior to the depositing of the another dielectric layer.
3. The method of claim 1 , wherein the second trench pattern includes a smaller size in a lower cap layer than in a higher cap layer.
4. The method of claim 1 , wherein one of the at least three cap layers includes an organic planarizing layer.
5. The method of claim 4 , wherein the spacer forming includes forming a low temperature oxide (LTO) conformal layer on the organic planarizing layer.
6. The method of claim 1 , further comprising extracting the dielectric layer between the interconnects through the second trench pattern in the cap layer.
7. The method of claim 1 , wherein the sub-lithographic dimension is smaller than a minimum distance between the interconnects.
8. The method of claim 1 , wherein the interconnects include copper interconnects.
9. The method of claim 1 , wherein the spacer forming includes depositing a conformal layer and removing the conformal layer on a surface of the photoresist to form the second trench pattern.
10. The method of claim 1 , wherein the spacer forming includes depositing a conformal layer.
11. A method of forming an air gap containing interconnect structure, the method comprising:
forming a dielectric layer including interconnects on a substrate;
depositing a plurality of cap layers on the dielectric layer;
depositing a photoresist over the cap layers;
patterning the photoresist to include a first trench pattern at most partially overlying the interconnects;
forming a spacer within the first trench pattern to form a second trench pattern having a sub-lithographic dimension;
transferring the second trench pattern into the cap layers and into the dielectric layer, such that a trench is formed between the interconnects;
removing all of the cap layers except one prior to the depositing of the another dielectric layer; and
depositing another dielectric layer to form an air gap by pinching off the trench in the dielectric layer.
12. The method of claim 11 , further comprising extracting the dielectric layer between the interconnects through the second trench pattern in the cap layer.
13. The method of claim 11 , wherein the sub-lithographic dimension is smaller than a minimum distance between the interconnects.