SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.
1 . A substrate processing apparatus comprising:
a processing chamber that houses a substrate;
a pipe that supplies gas into the processing chamber; and
a heating unit that is provided in the middle of the pipe and heats the gas, wherein
the heating unit heats the gas to a temperature lower than a temperature at which degas is generated from the inside of the pipe, and the substrate is dried in the heated gas.
2 . The substrate processing apparatus according to claim 1 , wherein the gas contains a vaporized organic solvent.
3 . The substrate processing apparatus according to claim 2 , wherein the concentration of the organic solvent in the gas is set so that a dew point of the organic solvent becomes lower than room temperature.
4 . The substrate processing apparatus according to claim 3 , wherein the temperature of the gas is equal to or above a room temperature.
5 . The substrate processing apparatus according to claim 1 , wherein the gas is inert gas.
6 . The substrate processing apparatus according to claim 1 , wherein a liquid tank containing a liquid and a substrate holder for dipping the substrate into the liquid in the liquid tank are further provided in the processing chamber.
7 . The substrate processing apparatus according to claim 6 , wherein
the substrate is cleaned in the liquid tank,
a gas containing a vaporized organic solvent is supplied from the pipe into the processing chamber after the cleaning, and
an inert gas is supplied from the pipe into the processing chamber to replace the atmosphere inside the processing chamber with the inert gas.
8 . The substrate processing apparatus according to claim 6 , wherein the liquid is any of a deionized water and a chemical solution.
9 . The substrate processing apparatus according to claim 1 , wherein the pipe is made of resin.
10 . The substrate processing apparatus according to claim 9 , wherein the temperature at which the degas is generated is 100° C.
11 . A substrate processing method comprising:
drying a substrate by exposing the substrate to a heated gas supplied from a pipe, and by setting the gas to a temperature lower than a temperature at which degas is generated from the pipe.
12 . The substrate processing method according to claim 11 , wherein a gas containing a vaporized organic solvent is used as the gas.
13 . The substrate processing method according to claim 12 , wherein the organic solvent in the gas is set to have such a concentration that a dew point of the organic solvent becomes lower than a room temperature.
14 . The substrate processing method according to claim 13 , wherein the temperature of the gas is set equal to or above the room temperature.
15 . The substrate processing method according to claim 11 , further comprising:
dipping the substrate into a liquid to clean the substrate before drying the substrate
16 . The substrate processing method according to claim 15 , wherein the drying of the substrate is performed by supplying a gas containing a vaporized organic solvent from the pipe into an atmosphere and then replacing the atmosphere with an inert gas by supplying the inert gas from the pipe into the atmosphere.
17 . The substrate processing method according to claim 11 , wherein
the pipe is made of resin, and
the temperature at which the degas is generated is 100° C.
18 . A method of manufacturing a semiconductor device comprising:
cleaning a semiconductor substrate;
performing a first drying for the semiconductor substrate after the cleaning;
forming a resist pattern on the semiconductor substrate after performing the first drying;
forming a well in the semiconductor substrate by implanting ions of an impurity into the semiconductor substrate by using the resist pattern as a mask;
removing the resist pattern;
cleaning the semiconductor substrate after removing the resist pattern;
performing a second drying for the semiconductor substrate after cleaning the substrate; and
forming a gate insulating film on the semiconductor substrate after performing the second drying,
wherein the semiconductor substrate is exposed to heated gas supplied from a pipe in at least any of the first drying and the second drying, and the gas is set to have a temperature lower than a temperature at which a degas is generated from the pipe.
19 . The method of manufacturing a semiconductor device according to claim 18 , wherein
a gas containing a vaporized organic solvent is used as the gas, and
the organic solvent in the gas is set to have such a concentration that a dew point of the organic solvent becomes lower than a room temperature.
20 . The method of manufacturing a semiconductor device according to claim 18 , wherein
the gas is set to have a temperature equal to or above a room temperature.