WIRING STRUCTURE OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE, AND METHOD AND DEVICE FOR DESIGNING THE SAME
A method is provided for designing a wiring structure of a wiring layer of a semiconductor integrated circuit device. The method includes a wire width detecting step of detecting a wire width of each wire in a wiring pattern of layout data, a wire identifying step of identifying a wire having a predetermined wire width or more based on a result of detection by the wire width detecting step, a wiring pitch detecting step of detecting a wiring pitch between the wire identified by the wire identifying step and another wire, and an air gap-forbidden region forming and removing step of forming or removing an air gap-forbidden region, depending on a result of detection by the wiring pitch detecting step.
1 . A wiring structure of a wiring layer having an air gap of a semiconductor integrated circuit device, wherein
an air gap is provided only in a wiring region or wiring regions in which a wiring pitch between a large-width wire and another wire has a predetermined value or less.
2 . A wiring structure of a wiring layer having an air gap of a semiconductor integrated circuit device, wherein
an air gap is provided only in a wiring region or wiring regions in which a wiring density has a predetermined value or less.
3 . A wiring structure of a wiring layer having an air gap of a semiconductor integrated circuit device, wherein
an air gap and an insulating film are provided between wires in the wiring layer.
4 . A wiring structure of a semiconductor integrated circuit device having a multilayer wiring structure having an air gap, wherein
an air gap is provided only either in an odd-number layer or layers or an even-number layer or layers in a multilayer wiring layer.
5 . A wiring structure of a semiconductor integrated circuit device having a multilayer wiring structure having an air gap, wherein
an air gap is provided only in an odd-number layer or layers in a region of a portion of a multilayer wiring layer, and
an air gap is provided only in an even-number layer or layers in the other region of the multilayer wiring layer.
6 . A wiring structure of a semiconductor integrated circuit device having a multilayer wiring structure having an air gap, wherein
an insulating film region formed in a layer above or below the air gap has the same length as that of the air gap, and the same width as that of a closest air gap in the same wiring layer as that of the insulating film region.
7 . A wiring structure of a semiconductor integrated circuit device having a multilayer wiring structure having an air gap, wherein
an upper-layer wire present in a layer above the air gap is connected to a wire on an insulating film in the same wiring layer as that of the upper-layer wire at at least one point.
8 . A wiring structure of a semiconductor integrated circuit having a multilayer wiring structure having an air gap, wherein
an entirety of at least one side of an upper-layer wire present in a layer above the air gap does not overlap an end portion of the underlying air gap.
9 . A wiring structure of a semiconductor integrated circuit having a multilayer wiring structure having an air gap, wherein
at least one insulator is provided in an air gap-formed region of a reference layer and at an overlapping portion between the air gap-formed region of the reference layer and an upper-layer wire present in a layer above the reference layer.
10 . A wiring structure of a wiring layer having an air gap of a semiconductor integrated circuit device, wherein
a wire connected to a via adjacent to the air gap has a larger protrusion amount in a direction in which the air gap is present than in the other directions.